Abstract
In order to understand the mechanism of Ag crystallite formation at the paste/Si interface, the interfacial reactions between a Ag paste containing PbO-based glass frit and an n-type (100) Si wafer during firing at 800 °C were examined by varying the oxygen partial pressure (Po2) in the firing ambience. The formation of inverted pyramidal Ag crystallites at the glass/Si interface was attributed to the redox reaction between the Ag+ ions dissolved in the fluidized glass and the Si wafer. Without any oxygen in the firing ambience, no Ag crystallite was formed. The Po2 in the firing ambience strongly affected the size and distribution of the Ag crystallites, as well as the sintering behavior of Ag powder, via its influence on the reaction forming the Ag+ ions. The present study results demonstrated that the ambient oxygen plays a crucial role in the formation of thick-film Ag contacts for crystalline Si solar cells.
| Original language | English |
|---|---|
| Journal | Current Applied Physics |
| Volume | 10 |
| Issue number | 2 SUPPL. |
| DOIs | |
| Publication status | Published - 2010 Mar 1 |
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Keywords
- Ag thick-film metallization
- Glass frit
- Interfacial reaction
- Oxygen partial pressure
- Silicon solar cell
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
Role of the ambient oxygen on the silver thick-film contact formation for crystalline silicon solar cells. / Cho, Sung Bin; Hong, Kyoung Kook; Huh, Joo Youl; Park, Hyun Jung; Jeong, Ji Weon.
In: Current Applied Physics, Vol. 10, No. 2 SUPPL., 01.03.2010.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Role of the ambient oxygen on the silver thick-film contact formation for crystalline silicon solar cells
AU - Cho, Sung Bin
AU - Hong, Kyoung Kook
AU - Huh, Joo Youl
AU - Park, Hyun Jung
AU - Jeong, Ji Weon
PY - 2010/3/1
Y1 - 2010/3/1
N2 - In order to understand the mechanism of Ag crystallite formation at the paste/Si interface, the interfacial reactions between a Ag paste containing PbO-based glass frit and an n-type (100) Si wafer during firing at 800 °C were examined by varying the oxygen partial pressure (Po2) in the firing ambience. The formation of inverted pyramidal Ag crystallites at the glass/Si interface was attributed to the redox reaction between the Ag+ ions dissolved in the fluidized glass and the Si wafer. Without any oxygen in the firing ambience, no Ag crystallite was formed. The Po2 in the firing ambience strongly affected the size and distribution of the Ag crystallites, as well as the sintering behavior of Ag powder, via its influence on the reaction forming the Ag+ ions. The present study results demonstrated that the ambient oxygen plays a crucial role in the formation of thick-film Ag contacts for crystalline Si solar cells.
AB - In order to understand the mechanism of Ag crystallite formation at the paste/Si interface, the interfacial reactions between a Ag paste containing PbO-based glass frit and an n-type (100) Si wafer during firing at 800 °C were examined by varying the oxygen partial pressure (Po2) in the firing ambience. The formation of inverted pyramidal Ag crystallites at the glass/Si interface was attributed to the redox reaction between the Ag+ ions dissolved in the fluidized glass and the Si wafer. Without any oxygen in the firing ambience, no Ag crystallite was formed. The Po2 in the firing ambience strongly affected the size and distribution of the Ag crystallites, as well as the sintering behavior of Ag powder, via its influence on the reaction forming the Ag+ ions. The present study results demonstrated that the ambient oxygen plays a crucial role in the formation of thick-film Ag contacts for crystalline Si solar cells.
KW - Ag thick-film metallization
KW - Glass frit
KW - Interfacial reaction
KW - Oxygen partial pressure
KW - Silicon solar cell
UR - http://www.scopus.com/inward/record.url?scp=77949772041&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77949772041&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2009.11.054
DO - 10.1016/j.cap.2009.11.054
M3 - Article
AN - SCOPUS:77949772041
VL - 10
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 2 SUPPL.
ER -