Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate

Szu Lin Cheng, Jesse Lu, Gary Shambat, Hyun Yong Yu, Krishna Saraswat, Jelena Vuckovic, Yoshio Nishi

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163 Citations (Scopus)

Abstract

We report the room temperature electroluminescence (EL) at 1.6 μm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a superlinear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve better efficiency of the device. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to operate at room temperature or above. These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device.

Original languageEnglish
Pages (from-to)10019-10024
Number of pages6
JournalOptics Express
Volume17
Issue number12
DOIs
Publication statusPublished - 2009 Jun 8
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Cheng, S. L., Lu, J., Shambat, G., Yu, H. Y., Saraswat, K., Vuckovic, J., & Nishi, Y. (2009). Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate. Optics Express, 17(12), 10019-10024. https://doi.org/10.1364/OE.17.010019