Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate

Szu Lin Cheng, Jesse Lu, Gary Shambat, Hyun-Yong Yu, Krishna Saraswat, Jelena Vuckovic, Yoshio Nishi

Research output: Contribution to journalArticle

158 Citations (Scopus)

Abstract

We report the room temperature electroluminescence (EL) at 1.6 μm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a superlinear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve better efficiency of the device. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to operate at room temperature or above. These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device.

Original languageEnglish
Pages (from-to)10019-10024
Number of pages6
JournalOptics Express
Volume17
Issue number12
DOIs
Publication statusPublished - 2009 Jun 8
Externally publishedYes

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electroluminescence
light emitting diodes
room temperature
augmentation
high current
luminescence
temperature

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Cheng, S. L., Lu, J., Shambat, G., Yu, H-Y., Saraswat, K., Vuckovic, J., & Nishi, Y. (2009). Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate. Optics Express, 17(12), 10019-10024. https://doi.org/10.1364/OE.17.010019

Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate. / Cheng, Szu Lin; Lu, Jesse; Shambat, Gary; Yu, Hyun-Yong; Saraswat, Krishna; Vuckovic, Jelena; Nishi, Yoshio.

In: Optics Express, Vol. 17, No. 12, 08.06.2009, p. 10019-10024.

Research output: Contribution to journalArticle

Cheng, SL, Lu, J, Shambat, G, Yu, H-Y, Saraswat, K, Vuckovic, J & Nishi, Y 2009, 'Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate', Optics Express, vol. 17, no. 12, pp. 10019-10024. https://doi.org/10.1364/OE.17.010019
Cheng, Szu Lin ; Lu, Jesse ; Shambat, Gary ; Yu, Hyun-Yong ; Saraswat, Krishna ; Vuckovic, Jelena ; Nishi, Yoshio. / Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate. In: Optics Express. 2009 ; Vol. 17, No. 12. pp. 10019-10024.
@article{ec5f366842fd4c7dbde264ee8d38c049,
title = "Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate",
abstract = "We report the room temperature electroluminescence (EL) at 1.6 μm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a superlinear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve better efficiency of the device. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to operate at room temperature or above. These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device.",
author = "Cheng, {Szu Lin} and Jesse Lu and Gary Shambat and Hyun-Yong Yu and Krishna Saraswat and Jelena Vuckovic and Yoshio Nishi",
year = "2009",
month = "6",
day = "8",
doi = "10.1364/OE.17.010019",
language = "English",
volume = "17",
pages = "10019--10024",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "12",

}

TY - JOUR

T1 - Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate

AU - Cheng, Szu Lin

AU - Lu, Jesse

AU - Shambat, Gary

AU - Yu, Hyun-Yong

AU - Saraswat, Krishna

AU - Vuckovic, Jelena

AU - Nishi, Yoshio

PY - 2009/6/8

Y1 - 2009/6/8

N2 - We report the room temperature electroluminescence (EL) at 1.6 μm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a superlinear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve better efficiency of the device. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to operate at room temperature or above. These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device.

AB - We report the room temperature electroluminescence (EL) at 1.6 μm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a superlinear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve better efficiency of the device. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to operate at room temperature or above. These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device.

UR - http://www.scopus.com/inward/record.url?scp=66849087515&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=66849087515&partnerID=8YFLogxK

U2 - 10.1364/OE.17.010019

DO - 10.1364/OE.17.010019

M3 - Article

C2 - 19506652

AN - SCOPUS:66849087515

VL - 17

SP - 10019

EP - 10024

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 12

ER -