Room-temperature 2-D photonic bandgap single defect laser

Jeong Ki Hwang, Han Youl Ryu, Dae Sung Song, Il Young Han, Hyun Woo Song, Hong Kyu Park, Yong Hee Lee, Dong Hoon Jang

Research output: Contribution to journalConference article

Abstract

A 2D photonic bandgap single defect laser is demonstrated. For an active medium, six strain compensated InGaAsP quantum wells are employed because of the relatively small surface recombination velocity. To realize a mechanically robust structure with good thermal properties, the InGaAsP layer was fused with the AlAs layer on top of a GaAs wafer. The top AlAs is wet-oxidized for optical confinement in vertical direction. The finished photonic bandgap cavity is optically pumped with a 980-nm diode laser beam focused to approximately 4 mm in diameter.

Original languageEnglish
Pages (from-to)415-416
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
Publication statusPublished - 1999
EventProceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) - San Francisco, CA, USA
Duration: 1999 Nov 81999 Nov 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Hwang, J. K., Ryu, H. Y., Song, D. S., Han, I. Y., Song, H. W., Park, H. K., Lee, Y. H., & Jang, D. H. (1999). Room-temperature 2-D photonic bandgap single defect laser. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 415-416.