Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island

S. J. Shin, J. J. Lee, H. J. Kang, J. B. Choi, S. R.Eric Yang, Y. Takahashi, D. G. Hasko

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

We report on transport measurement performed on a room-temperature- operating ultrasmall Coulomb blockade devices with a silicon island of sub5 nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This key feature of charge stability with additional fine structures of Coulomb peaks are successfully modeled by including the interplay between Coulomb interaction, valley splitting, and strong quantum confinement, which leads to several low-energy many-body excited states for each dot occupancy. These excited states become enhanced in the sub5 nm ultrasmall scale and persist even at 300K in the form of cluster, leading to the substantial modulation of charge stability.

Original languageEnglish
Pages (from-to)1591-1597
Number of pages7
JournalNano Letters
Volume11
Issue number4
DOIs
Publication statusPublished - 2011 Apr 13

Keywords

  • Coulomb blockade
  • Single-electron transport
  • nanoscale silicon dot
  • quantum effects
  • room-temperature charge stability

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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  • Cite this

    Shin, S. J., Lee, J. J., Kang, H. J., Choi, J. B., Yang, S. R. E., Takahashi, Y., & Hasko, D. G. (2011). Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island. Nano Letters, 11(4), 1591-1597. https://doi.org/10.1021/nl1044692