Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island

S. J. Shin, J. J. Lee, H. J. Kang, J. B. Choi, Sung Ryul Yang, Y. Takahashi, D. G. Hasko

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

We report on transport measurement performed on a room-temperature- operating ultrasmall Coulomb blockade devices with a silicon island of sub5 nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This key feature of charge stability with additional fine structures of Coulomb peaks are successfully modeled by including the interplay between Coulomb interaction, valley splitting, and strong quantum confinement, which leads to several low-energy many-body excited states for each dot occupancy. These excited states become enhanced in the sub5 nm ultrasmall scale and persist even at 300K in the form of cluster, leading to the substantial modulation of charge stability.

Original languageEnglish
Pages (from-to)1591-1597
Number of pages7
JournalNano Letters
Volume11
Issue number4
DOIs
Publication statusPublished - 2011 Apr 13

Fingerprint

Silicon
Excited states
silicon
room temperature
Coulomb blockade
Diamond
Quantum confinement
Coulomb interactions
Temperature
excitation
valleys
Diamonds
fine structure
diamonds
Modulation
slopes
modulation
interactions
energy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Shin, S. J., Lee, J. J., Kang, H. J., Choi, J. B., Yang, S. R., Takahashi, Y., & Hasko, D. G. (2011). Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island. Nano Letters, 11(4), 1591-1597. https://doi.org/10.1021/nl1044692

Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island. / Shin, S. J.; Lee, J. J.; Kang, H. J.; Choi, J. B.; Yang, Sung Ryul; Takahashi, Y.; Hasko, D. G.

In: Nano Letters, Vol. 11, No. 4, 13.04.2011, p. 1591-1597.

Research output: Contribution to journalArticle

Shin, SJ, Lee, JJ, Kang, HJ, Choi, JB, Yang, SR, Takahashi, Y & Hasko, DG 2011, 'Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island', Nano Letters, vol. 11, no. 4, pp. 1591-1597. https://doi.org/10.1021/nl1044692
Shin, S. J. ; Lee, J. J. ; Kang, H. J. ; Choi, J. B. ; Yang, Sung Ryul ; Takahashi, Y. ; Hasko, D. G. / Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island. In: Nano Letters. 2011 ; Vol. 11, No. 4. pp. 1591-1597.
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