Room-temperature Coulomb blockade effect in silicon quantum dots in silicon nitride films

Chang Hee Cho, Baek Hyun Kim, Seong Ju Park

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

A room-temperature Coulomb blockade effect was observed in silicon quantum dots (Si QDs) spontaneously grown in a silicon nitride film. The metal-insulator-metal device containing the Si QDs showed a clear Coulomb staircase and differential conductance peaks at room temperature. The size distribution of the Si QDs determined by high-resolution transmission electron microscopy suggests that the measured single electron addition energy of 67 meV can be attributed to the charging energy of 63 meV of the Si QDs with the largest diameter of 4.7 nm among the various-sized Si QDs.

Original languageEnglish
Article number013116
JournalApplied Physics Letters
Volume89
Issue number1
DOIs
Publication statusPublished - 2006 Jul 14
Externally publishedYes

Fingerprint

silicon nitrides
quantum dots
silicon
room temperature
stairways
metals
charging
insulators
transmission electron microscopy
energy
high resolution
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Room-temperature Coulomb blockade effect in silicon quantum dots in silicon nitride films. / Cho, Chang Hee; Kim, Baek Hyun; Park, Seong Ju.

In: Applied Physics Letters, Vol. 89, No. 1, 013116, 14.07.2006.

Research output: Contribution to journalArticle

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