Room temperature ferromagnetism in GaMnN and GaMnP

S. J. Pearton, M. E. Overberg, G. T. Thaler, C. R. Abernathy, Ji Hyun Kim, F. Ren, N. Theodoropoulou, A. F. Hebard, Yun Daniel Park

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Results on the synthesis of ferromagnetic GaMnN and GaMnP by both Molecular Beam Epitaxy or implantation of Mn directly into p-GaN or GaP(C) at elevated temperatures to avoid amorphization will be described. There is a relatively broad range of growth conditions under which single-crystal, single-phase material may be obtained with significant Mn concentrations. The effects of background doping level are discussed, along with a comparison of results on direct implantation of Fe and Ni instead of Mn. Essential requirements lot utilizing the spin of the electron in device structures include the ability to achieve efficient electrical spin injection and transport of spin-polarized carriers, along with effective detection of these carriers.

Original languageEnglish
Pages (from-to)222-227
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Volume195
Issue number1 SPEC
DOIs
Publication statusPublished - 2003 Jan 1
Externally publishedYes

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Amorphization
Ferromagnetism
Molecular beam epitaxy
ferromagnetism
Doping (additives)
Single crystals
Electrons
implantation
room temperature
Temperature
molecular beam epitaxy
injection
requirements
single crystals
synthesis
electrons
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Pearton, S. J., Overberg, M. E., Thaler, G. T., Abernathy, C. R., Kim, J. H., Ren, F., ... Park, Y. D. (2003). Room temperature ferromagnetism in GaMnN and GaMnP. Physica Status Solidi (A) Applied Research, 195(1 SPEC), 222-227. https://doi.org/10.1002/pssa.200306283

Room temperature ferromagnetism in GaMnN and GaMnP. / Pearton, S. J.; Overberg, M. E.; Thaler, G. T.; Abernathy, C. R.; Kim, Ji Hyun; Ren, F.; Theodoropoulou, N.; Hebard, A. F.; Park, Yun Daniel.

In: Physica Status Solidi (A) Applied Research, Vol. 195, No. 1 SPEC, 01.01.2003, p. 222-227.

Research output: Contribution to journalArticle

Pearton, SJ, Overberg, ME, Thaler, GT, Abernathy, CR, Kim, JH, Ren, F, Theodoropoulou, N, Hebard, AF & Park, YD 2003, 'Room temperature ferromagnetism in GaMnN and GaMnP', Physica Status Solidi (A) Applied Research, vol. 195, no. 1 SPEC, pp. 222-227. https://doi.org/10.1002/pssa.200306283
Pearton SJ, Overberg ME, Thaler GT, Abernathy CR, Kim JH, Ren F et al. Room temperature ferromagnetism in GaMnN and GaMnP. Physica Status Solidi (A) Applied Research. 2003 Jan 1;195(1 SPEC):222-227. https://doi.org/10.1002/pssa.200306283
Pearton, S. J. ; Overberg, M. E. ; Thaler, G. T. ; Abernathy, C. R. ; Kim, Ji Hyun ; Ren, F. ; Theodoropoulou, N. ; Hebard, A. F. ; Park, Yun Daniel. / Room temperature ferromagnetism in GaMnN and GaMnP. In: Physica Status Solidi (A) Applied Research. 2003 ; Vol. 195, No. 1 SPEC. pp. 222-227.
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