Abstract
Results on the synthesis of ferromagnetic GaMnN and GaMnP by both Molecular Beam Epitaxy or implantation of Mn directly into p-GaN or GaP(C) at elevated temperatures to avoid amorphization will be described. There is a relatively broad range of growth conditions under which single-crystal, single-phase material may be obtained with significant Mn concentrations. The effects of background doping level are discussed, along with a comparison of results on direct implantation of Fe and Ni instead of Mn. Essential requirements lot utilizing the spin of the electron in device structures include the ability to achieve efficient electrical spin injection and transport of spin-polarized carriers, along with effective detection of these carriers.
| Original language | English |
|---|---|
| Pages (from-to) | 222-227 |
| Number of pages | 6 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 195 |
| Issue number | 1 SPEC |
| DOIs | |
| Publication status | Published - 2003 Jan 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Room temperature ferromagnetism in GaMnN and GaMnP. / Pearton, S. J.; Overberg, M. E.; Thaler, G. T.; Abernathy, C. R.; Kim, Ji Hyun; Ren, F.; Theodoropoulou, N.; Hebard, A. F.; Park, Yun Daniel.
In: Physica Status Solidi (A) Applied Research, Vol. 195, No. 1 SPEC, 01.01.2003, p. 222-227.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Room temperature ferromagnetism in GaMnN and GaMnP
AU - Pearton, S. J.
AU - Overberg, M. E.
AU - Thaler, G. T.
AU - Abernathy, C. R.
AU - Kim, Ji Hyun
AU - Ren, F.
AU - Theodoropoulou, N.
AU - Hebard, A. F.
AU - Park, Yun Daniel
PY - 2003/1/1
Y1 - 2003/1/1
N2 - Results on the synthesis of ferromagnetic GaMnN and GaMnP by both Molecular Beam Epitaxy or implantation of Mn directly into p-GaN or GaP(C) at elevated temperatures to avoid amorphization will be described. There is a relatively broad range of growth conditions under which single-crystal, single-phase material may be obtained with significant Mn concentrations. The effects of background doping level are discussed, along with a comparison of results on direct implantation of Fe and Ni instead of Mn. Essential requirements lot utilizing the spin of the electron in device structures include the ability to achieve efficient electrical spin injection and transport of spin-polarized carriers, along with effective detection of these carriers.
AB - Results on the synthesis of ferromagnetic GaMnN and GaMnP by both Molecular Beam Epitaxy or implantation of Mn directly into p-GaN or GaP(C) at elevated temperatures to avoid amorphization will be described. There is a relatively broad range of growth conditions under which single-crystal, single-phase material may be obtained with significant Mn concentrations. The effects of background doping level are discussed, along with a comparison of results on direct implantation of Fe and Ni instead of Mn. Essential requirements lot utilizing the spin of the electron in device structures include the ability to achieve efficient electrical spin injection and transport of spin-polarized carriers, along with effective detection of these carriers.
UR - http://www.scopus.com/inward/record.url?scp=0037278181&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037278181&partnerID=8YFLogxK
U2 - 10.1002/pssa.200306283
DO - 10.1002/pssa.200306283
M3 - Article
AN - SCOPUS:0037278181
VL - 195
SP - 222
EP - 227
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 1 SPEC
ER -