Abstract
Results on the synthesis of ferromagnetic GaMnN and GaMnP by both Molecular Beam Epitaxy or implantation of Mn directly into p-GaN or GaP(C) at elevated temperatures to avoid amorphization will be described. There is a relatively broad range of growth conditions under which single-crystal, single-phase material may be obtained with significant Mn concentrations. The effects of background doping level are discussed, along with a comparison of results on direct implantation of Fe and Ni instead of Mn. Essential requirements lot utilizing the spin of the electron in device structures include the ability to achieve efficient electrical spin injection and transport of spin-polarized carriers, along with effective detection of these carriers.
| Original language | English |
|---|---|
| Pages (from-to) | 222-227 |
| Number of pages | 6 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 195 |
| Issue number | 1 SPEC |
| DOIs | |
| Publication status | Published - 2003 Jan 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Cite this
Pearton, S. J., Overberg, M. E., Thaler, G. T., Abernathy, C. R., Kim, J., Ren, F., Theodoropoulou, N., Hebard, A. F., & Park, Y. D. (2003). Room temperature ferromagnetism in GaMnN and GaMnP. Physica Status Solidi (A) Applied Research, 195(1 SPEC), 222-227. https://doi.org/10.1002/pssa.200306283