Room-temperature ferromagnetism of Cu ion-implanted Ga-doped ZnO

Jong Han Lee, Sangwon Shin, Keun Hwa Chae, Donghwan Kim, Jonghan Song

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

1 MeV Cu 2 ions have been implanted into un-doped ZnO and Ga-doped ZnO films with a dose of 1 × 10 17 ions/cm 2 at room-temperature. Cu ion-implanted Ga-doped ZnO had ferromagnetism at room-temperature and the saturation magnetization of this sample was estimated to be 0.12 μ B per Cu, while the Cu ion-implanted un-doped ZnO did not show ferromagnetic behavior. Near-edge X-ray fine structure (NEXAFS) spectroscopy revealed that a partial amount of implanted Cu ions existed as Cu 2 (d 9) state in Ga-doped ZnO film. On the other hand, almost Cu atoms existed as Cu 1 (d 10) state in un-doped ZnO film. However, the subsequent annealing at temperature above 800°C on this ferromagnetic sample induced the annihilation of ferromagnetism due to the formation of non-ferromagnetic Cu 2O phase.

Original languageEnglish
Pages (from-to)924-927
Number of pages4
JournalCurrent Applied Physics
Volume12
Issue number3
DOIs
Publication statusPublished - 2012 May

Keywords

  • Copper implantation
  • Dilute magnetic semiconductor
  • Ferromagnetic
  • ZnO

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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