Room temperature observation of single electron tunneling effect in self-assembled metal quantum dots on a semiconductor substrate

Kang Ho Park, Jeong Sook Ha, Wan Soo Yun, Mincheol Shin, Kyoung Wan Park, El Hang Lee

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

We report on the observation of room-temperature single electron tunneling phenomena in a metal-insulator-metal-semiconductor double-junction structure. The nanosized Ag dots were self-assembled on a Sb-terminated Si(100) surface, and the Coulomb gap and staircases were observed in the local current-voltage (I-V) measurements using scanning tunneling microscopy. The I-V characteristics exhibiting the single electron tunneling behavior vary significantly with the variation of the measurement position within the same Ag droplet. These phenomena are well described by the tip-dot(Ag)-Si double-junction picture.

Original languageEnglish
Pages (from-to)1469-1471
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number11
Publication statusPublished - 1997 Sep 15
Externally publishedYes

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electron tunneling
quantum dots
MIM (semiconductors)
stairways
room temperature
metals
scanning tunneling microscopy
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Room temperature observation of single electron tunneling effect in self-assembled metal quantum dots on a semiconductor substrate. / Park, Kang Ho; Ha, Jeong Sook; Yun, Wan Soo; Shin, Mincheol; Park, Kyoung Wan; Lee, El Hang.

In: Applied Physics Letters, Vol. 71, No. 11, 15.09.1997, p. 1469-1471.

Research output: Contribution to journalArticle

Park, Kang Ho ; Ha, Jeong Sook ; Yun, Wan Soo ; Shin, Mincheol ; Park, Kyoung Wan ; Lee, El Hang. / Room temperature observation of single electron tunneling effect in self-assembled metal quantum dots on a semiconductor substrate. In: Applied Physics Letters. 1997 ; Vol. 71, No. 11. pp. 1469-1471.
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