Room-temperature optoelectronic detection of valley-locked spin photocurrent in WSe2-graphene-Bi2Se3 heterostructures

Soonyoung Cha, Minji Noh, Je Hyun Kim, Jangyup Son, Hyemin Bae, Doeon Lee, Hoil Kim, Jekwan Lee, Hoseung Shin, Sangwan Sim, Seunghoon Yang, Chul-Ho Lee, Moon Ho Jo, Jun Sung Kim, Dohun Kim, Hyunyong Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using a lateral WSe2-graphene-Bi2Se3 heterostructure, we generate the valley-locked spin photocurrent in ion-liquid gated WSe2 transistor by the circular photogalvanic effect and extract the spin-polarized current in the Bi2Se3 topological insulator using the spin-momentum locking.

Original languageEnglish
Title of host publication2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781943580422
Publication statusPublished - 2018 Aug 6
Event2018 Conference on Lasers and Electro-Optics, CLEO 2018 - San Jose, United States
Duration: 2018 May 132018 May 18

Other

Other2018 Conference on Lasers and Electro-Optics, CLEO 2018
CountryUnited States
CitySan Jose
Period18/5/1318/5/18

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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    Cha, S., Noh, M., Kim, J. H., Son, J., Bae, H., Lee, D., Kim, H., Lee, J., Shin, H., Sim, S., Yang, S., Lee, C-H., Jo, M. H., Kim, J. S., Kim, D., & Choi, H. (2018). Room-temperature optoelectronic detection of valley-locked spin photocurrent in WSe2-graphene-Bi2Se3 heterostructures. In 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings [8426669] Institute of Electrical and Electronics Engineers Inc..