Abstract
A novel silicon-containing molecular resist material based on polyhedral oligomeric silsesquioxane, possessing trimethoxysilyl groups, was designed in order to reduce post-exposure delay problems and to improve resolution. Since the acid-catalyzed cross-linking reaction of trimethoxysilyl groups occurs at room temperature, there is no necessity of post-exposure bake. The molecular resist showed 0.7 μm line-andspace patterns using a mercury-xenon lamp in a contact printing mode and 100 nm line-and-space patterns using electron beam lithography.
Original language | English |
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Pages (from-to) | 1532-1537 |
Number of pages | 6 |
Journal | Macromolecular Rapid Communications |
Volume | 29 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2008 Sep 17 |
Externally published | Yes |
Keywords
- Electron beam
- Photoresist
- Polyhedral oligomeric silsesquioxane
- Trimethoxysilane
ASJC Scopus subject areas
- Polymers and Plastics
- Organic Chemistry
- Materials Chemistry