Room temperature processable silicon-containing molecular resist

Ji Young Park, Myung Gi Kim, Jin Baek Kim

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


A novel silicon-containing molecular resist material based on polyhedral oligomeric silsesquioxane, possessing trimethoxysilyl groups, was designed in order to reduce post-exposure delay problems and to improve resolution. Since the acid-catalyzed cross-linking reaction of trimethoxysilyl groups occurs at room temperature, there is no necessity of post-exposure bake. The molecular resist showed 0.7 μm line-andspace patterns using a mercury-xenon lamp in a contact printing mode and 100 nm line-and-space patterns using electron beam lithography.

Original languageEnglish
Pages (from-to)1532-1537
Number of pages6
JournalMacromolecular Rapid Communications
Issue number18
Publication statusPublished - 2008 Sep 17
Externally publishedYes


  • Electron beam
  • Photoresist
  • Polyhedral oligomeric silsesquioxane
  • Trimethoxysilane

ASJC Scopus subject areas

  • Polymers and Plastics
  • Organic Chemistry
  • Materials Chemistry


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