Abstract
A novel silicon-containing molecular resist material based on polyhedral oligomeric silsesquioxane, possessing trimethoxysilyl groups, was designed in order to reduce post-exposure delay problems and to improve resolution. Since the acid-catalyzed cross-linking reaction of trimethoxysilyl groups occurs at room temperature, there is no necessity of post-exposure bake. The molecular resist showed 0.7 μm line-andspace patterns using a mercury-xenon lamp in a contact printing mode and 100 nm line-and-space patterns using electron beam lithography.
| Original language | English |
|---|---|
| Pages (from-to) | 1532-1537 |
| Number of pages | 6 |
| Journal | Macromolecular Rapid Communications |
| Volume | 29 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 2008 Sep 17 |
| Externally published | Yes |
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Keywords
- Electron beam
- Photoresist
- Polyhedral oligomeric silsesquioxane
- Trimethoxysilane
ASJC Scopus subject areas
- Organic Chemistry
- Polymers and Plastics
- Materials Chemistry
Cite this
Room temperature processable silicon-containing molecular resist. / Park, Ji Young; Kim, Myung-Ki; Kim, Jin Baek.
In: Macromolecular Rapid Communications, Vol. 29, No. 18, 17.09.2008, p. 1532-1537.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Room temperature processable silicon-containing molecular resist
AU - Park, Ji Young
AU - Kim, Myung-Ki
AU - Kim, Jin Baek
PY - 2008/9/17
Y1 - 2008/9/17
N2 - A novel silicon-containing molecular resist material based on polyhedral oligomeric silsesquioxane, possessing trimethoxysilyl groups, was designed in order to reduce post-exposure delay problems and to improve resolution. Since the acid-catalyzed cross-linking reaction of trimethoxysilyl groups occurs at room temperature, there is no necessity of post-exposure bake. The molecular resist showed 0.7 μm line-andspace patterns using a mercury-xenon lamp in a contact printing mode and 100 nm line-and-space patterns using electron beam lithography.
AB - A novel silicon-containing molecular resist material based on polyhedral oligomeric silsesquioxane, possessing trimethoxysilyl groups, was designed in order to reduce post-exposure delay problems and to improve resolution. Since the acid-catalyzed cross-linking reaction of trimethoxysilyl groups occurs at room temperature, there is no necessity of post-exposure bake. The molecular resist showed 0.7 μm line-andspace patterns using a mercury-xenon lamp in a contact printing mode and 100 nm line-and-space patterns using electron beam lithography.
KW - Electron beam
KW - Photoresist
KW - Polyhedral oligomeric silsesquioxane
KW - Trimethoxysilane
UR - http://www.scopus.com/inward/record.url?scp=54949107758&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=54949107758&partnerID=8YFLogxK
U2 - 10.1002/marc.200800324
DO - 10.1002/marc.200800324
M3 - Article
AN - SCOPUS:54949107758
VL - 29
SP - 1532
EP - 1537
JO - Macromolecular Rapid Communications
JF - Macromolecular Rapid Communications
SN - 1022-1336
IS - 18
ER -