Room temperature processable silicon-containing molecular resist

Ji Young Park, Myung-Ki Kim, Jin Baek Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A novel silicon-containing molecular resist material based on polyhedral oligomeric silsesquioxane, possessing trimethoxysilyl groups, was designed in order to reduce post-exposure delay problems and to improve resolution. Since the acid-catalyzed cross-linking reaction of trimethoxysilyl groups occurs at room temperature, there is no necessity of post-exposure bake. The molecular resist showed 0.7 μm line-andspace patterns using a mercury-xenon lamp in a contact printing mode and 100 nm line-and-space patterns using electron beam lithography.

Original languageEnglish
Pages (from-to)1532-1537
Number of pages6
JournalMacromolecular Rapid Communications
Volume29
Issue number18
DOIs
Publication statusPublished - 2008 Sep 17
Externally publishedYes

Fingerprint

Particle beams
Electron guns
Electron beam lithography
Xenon
Photoresists
Electric lamps
Printing
Electron beams
Silicon
Acids
Temperature

Keywords

  • Electron beam
  • Photoresist
  • Polyhedral oligomeric silsesquioxane
  • Trimethoxysilane

ASJC Scopus subject areas

  • Organic Chemistry
  • Polymers and Plastics
  • Materials Chemistry

Cite this

Room temperature processable silicon-containing molecular resist. / Park, Ji Young; Kim, Myung-Ki; Kim, Jin Baek.

In: Macromolecular Rapid Communications, Vol. 29, No. 18, 17.09.2008, p. 1532-1537.

Research output: Contribution to journalArticle

Park, Ji Young ; Kim, Myung-Ki ; Kim, Jin Baek. / Room temperature processable silicon-containing molecular resist. In: Macromolecular Rapid Communications. 2008 ; Vol. 29, No. 18. pp. 1532-1537.
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