Roughness of zns: prce/ta2o5 interface and its effects on electrical performance of alternating current thin-film electroluminescent devices

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Roughness effects of neighboring dielectrics on electrical characteristics of thin-film electroluminescent devices were investigated in order to improve the understanding of physics for the devices. Atomic force microscopy analysis reveal that thicker bottom layer of Ta2O5 shows rougher surface resulting in the rougher surface of ZnS: PrCe layer. It can be easily seen that the dc leakage current increases rapidly with increase of surface roughness Furthermore it is notable that the initiation field of Poole-Frenkel current conduction is lowered by increasing surface roughness of Ta2O5 thin film. Internal charge-phosphor field (Qint - Fp) analysis and capacitance-ac voltage (C-V) analysis for ITO-Ta2O5-ZnS: PrCe-Al and ITO-Ta2O5-ZnS: PrCe-Ta2O5-Al show that the steady state phosphor field is smaller and C-V curve in transition region is less steep with increase of root-mean-square roughness between lower dielectric and phosphor layer in the alternating current thin-film electroluminescent (ACTFEL) devices. Therefore we conclude that interface roughness is one of the physical factors to change the electrical performance of ACTFEL device.

Original languageEnglish
Pages (from-to)892-896
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number5
Publication statusPublished - 1999 Dec 1



  • Electroluminescence
  • Insulator
  • Interface ta
  • Zns
  • o tfel

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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