Roughness of zns

prce/ta2o5 interface and its effects on electrical performance of alternating current thin-film electroluminescent devices

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13 Citations (Scopus)

Abstract

Roughness effects of neighboring dielectrics on electrical characteristics of thin-film electroluminescent devices were investigated in order to improve the understanding of physics for the devices. Atomic force microscopy analysis reveal that thicker bottom layer of Ta2O5 shows rougher surface resulting in the rougher surface of ZnS: PrCe layer. It can be easily seen that the dc leakage current increases rapidly with increase of surface roughness Furthermore it is notable that the initiation field of Poole-Frenkel current conduction is lowered by increasing surface roughness of Ta2O5 thin film. Internal charge-phosphor field (Qint - Fp) analysis and capacitance-ac voltage (C-V) analysis for ITO-Ta2O5-ZnS: PrCe-Al and ITO-Ta2O5-ZnS: PrCe-Ta2O5-Al show that the steady state phosphor field is smaller and C-V curve in transition region is less steep with increase of root-mean-square roughness between lower dielectric and phosphor layer in the alternating current thin-film electroluminescent (ACTFEL) devices. Therefore we conclude that interface roughness is one of the physical factors to change the electrical performance of ACTFEL device.

Original languageEnglish
Pages (from-to)892-896
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume46
Issue number5
DOIs
Publication statusPublished - 1999 Dec 1
Externally publishedYes

Fingerprint

Luminescent devices
alternating current
roughness
Surface roughness
phosphors
Thin films
Phosphors
thin films
ITO (semiconductors)
surface roughness
capacitance
physical factors
Capacitance
electric potential
Electric potential
leakage
Leakage currents
atomic force microscopy
Atomic force microscopy
conduction

Keywords

  • o tfel
  • Electroluminescence
  • Insulator
  • Interface ta
  • Zns

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Roughness of zns: prce/ta2o5 interface and its effects on electrical performance of alternating current thin-film electroluminescent devices",
abstract = "Roughness effects of neighboring dielectrics on electrical characteristics of thin-film electroluminescent devices were investigated in order to improve the understanding of physics for the devices. Atomic force microscopy analysis reveal that thicker bottom layer of Ta2O5 shows rougher surface resulting in the rougher surface of ZnS: PrCe layer. It can be easily seen that the dc leakage current increases rapidly with increase of surface roughness Furthermore it is notable that the initiation field of Poole-Frenkel current conduction is lowered by increasing surface roughness of Ta2O5 thin film. Internal charge-phosphor field (Qint - Fp) analysis and capacitance-ac voltage (C-V) analysis for ITO-Ta2O5-ZnS: PrCe-Al and ITO-Ta2O5-ZnS: PrCe-Ta2O5-Al show that the steady state phosphor field is smaller and C-V curve in transition region is less steep with increase of root-mean-square roughness between lower dielectric and phosphor layer in the alternating current thin-film electroluminescent (ACTFEL) devices. Therefore we conclude that interface roughness is one of the physical factors to change the electrical performance of ACTFEL device.",
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AU - Lee, Yun-Hi

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N2 - Roughness effects of neighboring dielectrics on electrical characteristics of thin-film electroluminescent devices were investigated in order to improve the understanding of physics for the devices. Atomic force microscopy analysis reveal that thicker bottom layer of Ta2O5 shows rougher surface resulting in the rougher surface of ZnS: PrCe layer. It can be easily seen that the dc leakage current increases rapidly with increase of surface roughness Furthermore it is notable that the initiation field of Poole-Frenkel current conduction is lowered by increasing surface roughness of Ta2O5 thin film. Internal charge-phosphor field (Qint - Fp) analysis and capacitance-ac voltage (C-V) analysis for ITO-Ta2O5-ZnS: PrCe-Al and ITO-Ta2O5-ZnS: PrCe-Ta2O5-Al show that the steady state phosphor field is smaller and C-V curve in transition region is less steep with increase of root-mean-square roughness between lower dielectric and phosphor layer in the alternating current thin-film electroluminescent (ACTFEL) devices. Therefore we conclude that interface roughness is one of the physical factors to change the electrical performance of ACTFEL device.

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