The manipulation of magnetization with interfacial modification using various spin-orbit coupling phenomena has been recently revisited due to its scientific and technological potential for next-generation memory devices. Herein, we experimentally and theoretically demonstrate the interfacial Dzyaloshinskii–Moriya interaction characteristics penetrating through a MgO dielectric layer inserted between the Pt and CoFeSiB. The inserted MgO layer seems to function as a chiral exchange interaction mediator of the interfacial Dzyaloshinskii–Moriya interaction from the heavy metal atoms to ferromagnet ones. The potential physical mechanism of the anti-symmetric exchange is based on the tunneling-like behavior of conduction electrons through the semi-conductor-like ultrathin MgO. Such behavior can be correlated with the oscillations of the indirect exchange coupling of the Ruderman–Kittel–Kasuya–Yosida type. From the theoretical demonstration, we could provide approximate estimation and show qualitative trends peculiar to the system under investigation.
|Publication status||Published - 2021 Dec 1|
ASJC Scopus subject areas
- Biochemistry, Genetics and Molecular Biology(all)
- Physics and Astronomy(all)