Run-to-run control of inductively coupled C2F6 plasma etching of SiO2

Construction of a numerical process with a computational fluid dynamics code

Seung Taek Seo, Yong Hee Lee, Kwang Soon Lee, Bum Kyoo Choi, Dae Ryook Yang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A numerical process to simulate SiO2 dry etching with inductively coupled C2F6 plasmas has been constructed using a commercial CFD code as a first step to design a run-to-run control system. The simulator was found to reasonably predict the reactive ion etching behavior of C2F6 plasmas and used to investigate the effects of plasma operating variables on the etch rate and uniformity. The relationship between the operating variables and the etching characteristics was mathematically modeled through linear regression for future run-to-run control system design.

Original languageEnglish
Pages (from-to)822-829
Number of pages8
JournalKorean Journal of Chemical Engineering
Volume22
Issue number6
DOIs
Publication statusPublished - 2005 Nov 1

Fingerprint

Plasma etching
Inductively coupled plasma
Computational fluid dynamics
Plasmas
Control systems
Dry etching
Reactive ion etching
Linear regression
Etching
Simulators
Systems analysis

Keywords

  • CF Plasmas
  • ICP Etcher
  • Run-to-Run Control
  • SiO Etching

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

Run-to-run control of inductively coupled C2F6 plasma etching of SiO2 : Construction of a numerical process with a computational fluid dynamics code. / Seo, Seung Taek; Lee, Yong Hee; Lee, Kwang Soon; Choi, Bum Kyoo; Yang, Dae Ryook.

In: Korean Journal of Chemical Engineering, Vol. 22, No. 6, 01.11.2005, p. 822-829.

Research output: Contribution to journalArticle

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AB - A numerical process to simulate SiO2 dry etching with inductively coupled C2F6 plasmas has been constructed using a commercial CFD code as a first step to design a run-to-run control system. The simulator was found to reasonably predict the reactive ion etching behavior of C2F6 plasmas and used to investigate the effects of plasma operating variables on the etch rate and uniformity. The relationship between the operating variables and the etching characteristics was mathematically modeled through linear regression for future run-to-run control system design.

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