Run-to-run control of inductively coupled C2F6 plasma etching of SiO2: Multivariable controller design and numerical application

Seung Taek Seo, Kwang Soon Lee, Dae Ryook Yang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


A model-based run-to-run control method has been devised for an inductively coupled plasma etcher and applied to a numerical process for etching SiO 2 film with C2F6 plasmas. The controller was designed to minimize a quadratic cost of control error for the oxide etch rate and etch uniformity by run-wise integral action of the RF power, chamber pressure and RF bias voltage. Through numerical simulation, it was shown that the controller can truly minimize the cost even when the set point is given not to be reached by the process.

Original languageEnglish
Pages (from-to)199-202
Number of pages4
JournalKorean Journal of Chemical Engineering
Issue number2
Publication statusPublished - 2006 Mar
Externally publishedYes


  • CF Plasmas
  • ICP Etcher
  • QILC
  • R2R Control
  • SiO Etching

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)


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