Run-to-run control of inductively coupled C2F6 plasma etching of SiO2

Multivariable controller design and numerical application

Seung Taek Seo, Kwang Soon Lee, Dae Ryook Yang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A model-based run-to-run control method has been devised for an inductively coupled plasma etcher and applied to a numerical process for etching SiO 2 film with C2F6 plasmas. The controller was designed to minimize a quadratic cost of control error for the oxide etch rate and etch uniformity by run-wise integral action of the RF power, chamber pressure and RF bias voltage. Through numerical simulation, it was shown that the controller can truly minimize the cost even when the set point is given not to be reached by the process.

Original languageEnglish
Pages (from-to)199-202
Number of pages4
JournalKorean Journal of Chemical Engineering
Volume23
Issue number2
DOIs
Publication statusPublished - 2006 Mar 1
Externally publishedYes

Fingerprint

Plasma etching
Inductively coupled plasma
Controllers
Bias voltage
Oxides
Costs
Etching
Plasmas
Computer simulation

Keywords

  • CF Plasmas
  • ICP Etcher
  • QILC
  • R2R Control
  • SiO Etching

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

Run-to-run control of inductively coupled C2F6 plasma etching of SiO2 : Multivariable controller design and numerical application. / Seo, Seung Taek; Lee, Kwang Soon; Yang, Dae Ryook.

In: Korean Journal of Chemical Engineering, Vol. 23, No. 2, 01.03.2006, p. 199-202.

Research output: Contribution to journalArticle

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