Sb enhancement of lateral superlattice formation in GaInP

C. M. Fetzer, R. T. Lee, S. W. Jun, G. B. Stringfellow, S. M. Lee, T. Y. Seong

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v) = 0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by Sb addition and that polarization along the [110] direction is as much as 41 times larger than along [110]. Transmission electron microscopy results show a lamellar domain structure in the [110]-zone axis dark-field images with a period of 120 nm. Atomic force microscopy shows surface undulations with the same period along the [110] direction. The results demonstrate an increase in the magnitude of the presence of lateral composition modulation with increasing Sb concentration.

Original languageEnglish
Pages (from-to)1376-1378
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number10
DOIs
Publication statusPublished - 2001 Mar 5
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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