Sb enhancement of lateral superlattice formation in GaInP

C. M. Fetzer; R. T. Lee; S. W. Jun; G. B. Stringfellow; S. M. Lee; T. Y. Seong

doi:10.1063/1.1350424

Sb enhancement of lateral superlattice formation in GaInP

C. M. Fetzer, R. T. Lee, S. W. Jun, G. B. Stringfellow, S. M. Lee, T. Y. Seong

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25 Citations (Scopus)

Abstract

Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v) = 0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by Sb addition and that polarization along the [110] direction is as much as 41 times larger than along [110]. Transmission electron microscopy results show a lamellar domain structure in the [110]-zone axis dark-field images with a period of 120 nm. Atomic force microscopy shows surface undulations with the same period along the [110] direction. The results demonstrate an increase in the magnitude of the presence of lateral composition modulation with increasing Sb concentration.

Original language	English
Pages (from-to)	1376-1378
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	10
DOIs	https://doi.org/10.1063/1.1350424
Publication status	Published - 2001 Mar 5
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Sb enhancement of lateral superlattice formation in GaInP",

abstract = "Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v) = 0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by Sb addition and that polarization along the [110] direction is as much as 41 times larger than along [110]. Transmission electron microscopy results show a lamellar domain structure in the [110]-zone axis dark-field images with a period of 120 nm. Atomic force microscopy shows surface undulations with the same period along the [110] direction. The results demonstrate an increase in the magnitude of the presence of lateral composition modulation with increasing Sb concentration.",

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T1 - Sb enhancement of lateral superlattice formation in GaInP

AU - Fetzer, C. M.

AU - Lee, R. T.

AU - Jun, S. W.

AU - Stringfellow, G. B.

AU - Lee, S. M.

AU - Seong, T. Y.

PY - 2001/3/5

Y1 - 2001/3/5

N2 - Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v) = 0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by Sb addition and that polarization along the [110] direction is as much as 41 times larger than along [110]. Transmission electron microscopy results show a lamellar domain structure in the [110]-zone axis dark-field images with a period of 120 nm. Atomic force microscopy shows surface undulations with the same period along the [110] direction. The results demonstrate an increase in the magnitude of the presence of lateral composition modulation with increasing Sb concentration.

AB - Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v) = 0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by Sb addition and that polarization along the [110] direction is as much as 41 times larger than along [110]. Transmission electron microscopy results show a lamellar domain structure in the [110]-zone axis dark-field images with a period of 120 nm. Atomic force microscopy shows surface undulations with the same period along the [110] direction. The results demonstrate an increase in the magnitude of the presence of lateral composition modulation with increasing Sb concentration.

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Sb enhancement of lateral superlattice formation in GaInP

Abstract

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