Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v) = 0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by Sb addition and that polarization along the  direction is as much as 41 times larger than along . Transmission electron microscopy results show a lamellar domain structure in the -zone axis dark-field images with a period of 120 nm. Atomic force microscopy shows surface undulations with the same period along the  direction. The results demonstrate an increase in the magnitude of the presence of lateral composition modulation with increasing Sb concentration.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2001 Mar 5|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)