Sb 2S 3-sensitized photoelectrochemical cells: Open circuit voltage enhancement through the introduction of poly-3-hexylthiophene interlayer

Jin Hyuck Heo, Sang Hyuk Im, Hi Jung Kim, Pablo P. Boix, Suk Joong Lee, Sang Il Seok, Iván Mora-Seró, Juan Bisquert

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The Sb 2S 3-sensitized photoelectrochemical cells (Sb 2S 3-SPECs) in cobalt electrolyte were fabricated by depositing Sb 2S 3 on the macroporous TiO 2 nanorods electrodes and consecutively spin-coating P3HT (Poly-3-hexylthiophene) interlayer to relieve the mass transport problem at vicinity of Sb 2S 3 and cobalt redox couples and reduce the backward recombination. Through the introduction of P3HT interlayer, we could greatly enhance the power conversion efficiency of Sb 2S 3-SPEC to 4.2% at 1 sun illumination, whereas the Sb 2S 3-SPEC without P3HT interlayer exhibits 3.2% of device efficiency. The electrochemical impedance analysis let us know that the improved device performance was mainly attributed to the reduced backward recombination building up the higher open circuit voltage.

Original languageEnglish
Pages (from-to)20717-20721
Number of pages5
JournalJournal of Physical Chemistry C
Volume116
Issue number39
DOIs
Publication statusPublished - 2012 Oct 4

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Energy(all)

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