Scalable growth of free-standing graphene wafers with copper(Cu) catalyst on SiO2/Si substrate

Thermal conductivity of the wafers

Yun-Hi Lee, Jong Hee Lee

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

The authors report scalable growth of free-standing graphene wafers with copper(Cu) catalyst on SiO2/Si substrate at low temperature and investigation of their thermal conductivity. The Cu is the most common and the cheapest catalyst among electronic materials. Our process for producing the graphene with the Cu is based on a low-pressure, fast-heating chemical vapor deposition method. Thermal conductivity measurements with nondestructive Raman spectroscopy showed that the free-standing-graphene is a good thermal conductor. The possibility of growing graphene wafer at low temperatures by using a Cu thin film should accelerate research and facilitate the development of graphene for practical applications

Original languageEnglish
Article number083101
JournalApplied Physics Letters
Volume96
Issue number8
DOIs
Publication statusPublished - 2010 Mar 12

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graphene
thermal conductivity
wafers
catalysts
copper
thermal conductors
low pressure
Raman spectroscopy
vapor deposition
heating
thin films
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Scalable growth of free-standing graphene wafers with copper(Cu) catalyst on SiO2/Si substrate : Thermal conductivity of the wafers. / Lee, Yun-Hi; Lee, Jong Hee.

In: Applied Physics Letters, Vol. 96, No. 8, 083101, 12.03.2010.

Research output: Contribution to journalArticle

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