Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration

Seongpil Chang, Ki Young Dong, Jung ho Park, Tae Yeon Oh, Jong Woo Kim, Sang Yeol Lee, Byeong Kwon Ju

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have investigated the parylene-groups for the device scaling-down as the protection layer of polyethersulfone (PES) substrate. In general, photolithography process on the PES substrate could not be allowed due to its poor chemical resistance. In this work, parylene-C is used as the protection layer. However, adhesion problem is observed caused by the hydrophobic property of parylene-groups. Thereby we additionally used SiO2 as the adhesion layer. Finally, we demonstrated the scaling-down of amorphous indium gallium zinc oxide thin film transistor on a plastic substrate by using lithography technique. Field-effect mobility, threshold voltage, current on-to-off ratio are measured to be 0.84 cm2 /V s, 19.7 V, and 7.62× 10 4, respectively.

Original languageEnglish
Article number243504
JournalApplied Physics Letters
Volume96
Issue number24
DOIs
Publication statusPublished - 2010 Jun 14

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gallium oxides
large scale integration
zinc oxides
indium
transistors
scaling
adhesion
thin films
photolithography
threshold voltage
plastics
lithography

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration. / Chang, Seongpil; Dong, Ki Young; Park, Jung ho; Oh, Tae Yeon; Kim, Jong Woo; Lee, Sang Yeol; Ju, Byeong Kwon.

In: Applied Physics Letters, Vol. 96, No. 24, 243504, 14.06.2010.

Research output: Contribution to journalArticle

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