We have investigated Sb overlayer structures on Si(111) with low energy electron diffraction and scanning tunneling microscope (STM). The Sb/Si(111)-53√× structure was constructed via the desorption of Sb from the saturated 2×1 surface at elevated temperature (700-750 "C). Its atomic structure and formation process were extensively studied with STM images, considering the structural stability. This Sb structure could be described in terms of the site selective replacement of outermost Si atoms with Sb atoms in the dimer-adatom-stacking fault 5×5 structure, which is generated by both the saturation of dangling bonds and strain due to the large lattice mismatch.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 1997 Dec 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films