Scanning tunneling microscopy study of intermediates in the dissociative adsorption of closo-1,2-dicarbadodecaborane on Si(111)

J. M. Carpinelli; E. W. Plummer; Dongjin Byun; P. A. Dowben

doi:10.1116/1.588236

Scanning tunneling microscopy study of intermediates in the dissociative adsorption of closo-1,2-dicarbadodecaborane on Si(111)

J. M. Carpinelli, E. W. Plummer, Dongjin Byun, P. A. Dowben

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

Closo-1,2-dicarbadodecaborane (C₂B₁₀H₁₂) is a source compound found to be suitable for the deposition of a high resistivity form of boron-carbide (B₅C), and the fabrication of boron-rich semiconductor devices. A scanning tunneling microscope (STM) was used to image these molecular icosahedra on Si(111)-(7 × 7). Molecular decomposition (tip induced and otherwise) produced a boron-carbide/silicon interface with pronounced heterojunction electronic characteristics. In STM, this interface is characterized by a disordering of the Si(111)-(7 × 7) reconstruction. We suggest, based on Auger electron spectroscopy data and low-energy electron diffraction observations, that boron atoms from the dissociated source molecules substitutionally occupy selvedge sites, as in the boron-induced (√3 × √3)R30° reconstruction of Si(111).

Original language	English
Pages (from-to)	1203-1206
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	13
Issue number	3
DOIs	https://doi.org/10.1116/1.588236
Publication status	Published - 1995 May
Externally published	Yes
Event	Proceedings of the 3rd International Conference on Nanometer-Scale Science and Technology - Denver, CO, USA Duration: 1994 Oct 24 → 1994 Oct 28

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Scanning tunneling microscopy study of intermediates in the dissociative adsorption of closo-1,2-dicarbadodecaborane on Si(111). / Carpinelli, J. M.; Plummer, E. W.; Byun, Dongjin et al.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 3, 05.1995, p. 1203-1206.

Research output: Contribution to journal › Conference article › peer-review

@article{edc9e52ca7bd42ce8adb944341dd7dd1,

title = "Scanning tunneling microscopy study of intermediates in the dissociative adsorption of closo-1,2-dicarbadodecaborane on Si(111)",

abstract = "Closo-1,2-dicarbadodecaborane (C2B10H12) is a source compound found to be suitable for the deposition of a high resistivity form of boron-carbide (B5C), and the fabrication of boron-rich semiconductor devices. A scanning tunneling microscope (STM) was used to image these molecular icosahedra on Si(111)-(7 × 7). Molecular decomposition (tip induced and otherwise) produced a boron-carbide/silicon interface with pronounced heterojunction electronic characteristics. In STM, this interface is characterized by a disordering of the Si(111)-(7 × 7) reconstruction. We suggest, based on Auger electron spectroscopy data and low-energy electron diffraction observations, that boron atoms from the dissociated source molecules substitutionally occupy selvedge sites, as in the boron-induced (√3 × √3)R30° reconstruction of Si(111).",

author = "Carpinelli, {J. M.} and Plummer, {E. W.} and Dongjin Byun and Dowben, {P. A.}",

year = "1995",

month = may,

doi = "10.1116/1.588236",

language = "English",

volume = "13",

pages = "1203--1206",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

note = "Proceedings of the 3rd International Conference on Nanometer-Scale Science and Technology ; Conference date: 24-10-1994 Through 28-10-1994",

}

TY - JOUR

T1 - Scanning tunneling microscopy study of intermediates in the dissociative adsorption of closo-1,2-dicarbadodecaborane on Si(111)

AU - Carpinelli, J. M.

AU - Plummer, E. W.

AU - Byun, Dongjin

AU - Dowben, P. A.

PY - 1995/5

Y1 - 1995/5

N2 - Closo-1,2-dicarbadodecaborane (C2B10H12) is a source compound found to be suitable for the deposition of a high resistivity form of boron-carbide (B5C), and the fabrication of boron-rich semiconductor devices. A scanning tunneling microscope (STM) was used to image these molecular icosahedra on Si(111)-(7 × 7). Molecular decomposition (tip induced and otherwise) produced a boron-carbide/silicon interface with pronounced heterojunction electronic characteristics. In STM, this interface is characterized by a disordering of the Si(111)-(7 × 7) reconstruction. We suggest, based on Auger electron spectroscopy data and low-energy electron diffraction observations, that boron atoms from the dissociated source molecules substitutionally occupy selvedge sites, as in the boron-induced (√3 × √3)R30° reconstruction of Si(111).

AB - Closo-1,2-dicarbadodecaborane (C2B10H12) is a source compound found to be suitable for the deposition of a high resistivity form of boron-carbide (B5C), and the fabrication of boron-rich semiconductor devices. A scanning tunneling microscope (STM) was used to image these molecular icosahedra on Si(111)-(7 × 7). Molecular decomposition (tip induced and otherwise) produced a boron-carbide/silicon interface with pronounced heterojunction electronic characteristics. In STM, this interface is characterized by a disordering of the Si(111)-(7 × 7) reconstruction. We suggest, based on Auger electron spectroscopy data and low-energy electron diffraction observations, that boron atoms from the dissociated source molecules substitutionally occupy selvedge sites, as in the boron-induced (√3 × √3)R30° reconstruction of Si(111).

UR - http://www.scopus.com/inward/record.url?scp=0029307994&partnerID=8YFLogxK

U2 - 10.1116/1.588236

DO - 10.1116/1.588236

M3 - Conference article

AN - SCOPUS:0029307994

SN - 1071-1023

VL - 13

SP - 1203

EP - 1206

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - Proceedings of the 3rd International Conference on Nanometer-Scale Science and Technology

Y2 - 24 October 1994 through 28 October 1994

ER -

Scanning tunneling microscopy study of intermediates in the dissociative adsorption of closo-1,2-dicarbadodecaborane on Si(111)

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