Scanning tunneling microscopy study of intermediates in the dissociative adsorption of closo-1,2-dicarbadodecaborane on Si(111)

J. M. Carpinelli, E. W. Plummer, Dong Jin Byun, P. A. Dowben

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Closo-1,2-dicarbadodecaborane (C2B10H12) is a source compound found to be suitable for the deposition of a high resistivity form of boron-carbide (B5C), and the fabrication of boron-rich semiconductor devices. A scanning tunneling microscope (STM) was used to image these molecular icosahedra on Si(111)-(7 × 7). Molecular decomposition (tip induced and otherwise) produced a boron-carbide/silicon interface with pronounced heterojunction electronic characteristics. In STM, this interface is characterized by a disordering of the Si(111)-(7 × 7) reconstruction. We suggest, based on Auger electron spectroscopy data and low-energy electron diffraction observations, that boron atoms from the dissociated source molecules substitutionally occupy selvedge sites, as in the boron-induced (√3 × √3)R30° reconstruction of Si(111).

Original languageEnglish
Pages (from-to)1203-1206
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume13
Issue number3
DOIs
Publication statusPublished - 1995 May 1
Externally publishedYes

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Scanning tunneling microscopy
Boron
Boron carbide
Adsorption
Microscopes
Scanning
Low energy electron diffraction
Auger electron spectroscopy
Semiconductor devices
Heterojunctions
Decomposition
Fabrication
Silicon
Atoms
Molecules

ASJC Scopus subject areas

  • Engineering(all)

Cite this

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abstract = "Closo-1,2-dicarbadodecaborane (C2B10H12) is a source compound found to be suitable for the deposition of a high resistivity form of boron-carbide (B5C), and the fabrication of boron-rich semiconductor devices. A scanning tunneling microscope (STM) was used to image these molecular icosahedra on Si(111)-(7 × 7). Molecular decomposition (tip induced and otherwise) produced a boron-carbide/silicon interface with pronounced heterojunction electronic characteristics. In STM, this interface is characterized by a disordering of the Si(111)-(7 × 7) reconstruction. We suggest, based on Auger electron spectroscopy data and low-energy electron diffraction observations, that boron atoms from the dissociated source molecules substitutionally occupy selvedge sites, as in the boron-induced (√3 × √3)R30° reconstruction of Si(111).",
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AU - Carpinelli, J. M.

AU - Plummer, E. W.

AU - Byun, Dong Jin

AU - Dowben, P. A.

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N2 - Closo-1,2-dicarbadodecaborane (C2B10H12) is a source compound found to be suitable for the deposition of a high resistivity form of boron-carbide (B5C), and the fabrication of boron-rich semiconductor devices. A scanning tunneling microscope (STM) was used to image these molecular icosahedra on Si(111)-(7 × 7). Molecular decomposition (tip induced and otherwise) produced a boron-carbide/silicon interface with pronounced heterojunction electronic characteristics. In STM, this interface is characterized by a disordering of the Si(111)-(7 × 7) reconstruction. We suggest, based on Auger electron spectroscopy data and low-energy electron diffraction observations, that boron atoms from the dissociated source molecules substitutionally occupy selvedge sites, as in the boron-induced (√3 × √3)R30° reconstruction of Si(111).

AB - Closo-1,2-dicarbadodecaborane (C2B10H12) is a source compound found to be suitable for the deposition of a high resistivity form of boron-carbide (B5C), and the fabrication of boron-rich semiconductor devices. A scanning tunneling microscope (STM) was used to image these molecular icosahedra on Si(111)-(7 × 7). Molecular decomposition (tip induced and otherwise) produced a boron-carbide/silicon interface with pronounced heterojunction electronic characteristics. In STM, this interface is characterized by a disordering of the Si(111)-(7 × 7) reconstruction. We suggest, based on Auger electron spectroscopy data and low-energy electron diffraction observations, that boron atoms from the dissociated source molecules substitutionally occupy selvedge sites, as in the boron-induced (√3 × √3)R30° reconstruction of Si(111).

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