Scattering mechanism of transparent conducting tin oxide films prepared by magnetron sputtering

I. H. Kim, J. H. Ko, Donghwan Kim, K. S. Lee, T. S. Lee, J. h. Jeong, B. Cheong, Y. J. Baik, W. M. Kim

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

Undoped SnO2-x thin films with amorphous phase were prepared at room temperature by radio frequency magnetron sputtering, and the changes in electrical, optical and structural properties were investigated upon annealing in atmosphere. The amorphous SnO2-x film had the minimum resistivity of 1.5 × 10- 3 Ω cm and the highest Hall mobility of 22 cm2/V s, which were comparable to those observed in polycrystalline doped SnO2 films. Examination of the temperature dependent Hall mobility revealed the grain boundary scattering as the dominant scattering mechanism for the crystallized SnO2-x films. Analysis made by using four coefficients instrument showed that undoped SnO2-x films had the characteristics of degenerate semiconductor with non-parabolic band structure, and that ionized impurity scattering with free electron screening was dominant mobility limiting mechanism in amorphous SnO2-x films.

Original languageEnglish
Pages (from-to)2475-2480
Number of pages6
JournalThin Solid Films
Volume515
Issue number4
DOIs
Publication statusPublished - 2006 Dec 5

Fingerprint

Tin oxides
Magnetron sputtering
tin oxides
Oxide films
oxide films
magnetron sputtering
Scattering
conduction
Hall mobility
scattering
Band structure
free electrons
Structural properties
radio frequencies
Screening
Grain boundaries
Electric properties
screening
grain boundaries
Optical properties

Keywords

  • Hall mobility
  • Scattering mechanisms
  • Sputtering
  • Tin oxide
  • Transparent conducting oxide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Scattering mechanism of transparent conducting tin oxide films prepared by magnetron sputtering. / Kim, I. H.; Ko, J. H.; Kim, Donghwan; Lee, K. S.; Lee, T. S.; Jeong, J. h.; Cheong, B.; Baik, Y. J.; Kim, W. M.

In: Thin Solid Films, Vol. 515, No. 4, 05.12.2006, p. 2475-2480.

Research output: Contribution to journalArticle

Kim, IH, Ko, JH, Kim, D, Lee, KS, Lee, TS, Jeong, JH, Cheong, B, Baik, YJ & Kim, WM 2006, 'Scattering mechanism of transparent conducting tin oxide films prepared by magnetron sputtering', Thin Solid Films, vol. 515, no. 4, pp. 2475-2480. https://doi.org/10.1016/j.tsf.2006.07.020
Kim, I. H. ; Ko, J. H. ; Kim, Donghwan ; Lee, K. S. ; Lee, T. S. ; Jeong, J. h. ; Cheong, B. ; Baik, Y. J. ; Kim, W. M. / Scattering mechanism of transparent conducting tin oxide films prepared by magnetron sputtering. In: Thin Solid Films. 2006 ; Vol. 515, No. 4. pp. 2475-2480.
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AU - Ko, J. H.

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AU - Lee, T. S.

AU - Jeong, J. h.

AU - Cheong, B.

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AB - Undoped SnO2-x thin films with amorphous phase were prepared at room temperature by radio frequency magnetron sputtering, and the changes in electrical, optical and structural properties were investigated upon annealing in atmosphere. The amorphous SnO2-x film had the minimum resistivity of 1.5 × 10- 3 Ω cm and the highest Hall mobility of 22 cm2/V s, which were comparable to those observed in polycrystalline doped SnO2 films. Examination of the temperature dependent Hall mobility revealed the grain boundary scattering as the dominant scattering mechanism for the crystallized SnO2-x films. Analysis made by using four coefficients instrument showed that undoped SnO2-x films had the characteristics of degenerate semiconductor with non-parabolic band structure, and that ionized impurity scattering with free electron screening was dominant mobility limiting mechanism in amorphous SnO2-x films.

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