Scavenging of Siliceous Grain-Boundary Phase of 8-mol%-Ytterbia-Stabilized Zirconia without Additive

Jong Heun Lee, Toshiyuki Mori, Ji Guang Li, Takayasu Ikegami, John Drennan, Doh Yeon Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The grain-boundary conductivity (σgb) of 8-mol%-ytterbia-stabilized zirconia increased markedly with heat treatment between 1000° and 1300°C with a slow heating rate (0.1°C/ min) before sintering. The extent of the σgb improvement was the same or larger than that via Al2O3 addition. The heat treatment did not affect the grain-interior conduction when sintered at 1600°C, while Al2O3-derived scavenging significantly did, given the larger increment of total conductivity in the heat-treated sample. The formation of a silicon-containing phase in a discrete form was suggested as a possible route of scavenging the resistive phase from the correlation between average grain size and σgb.

Original languageEnglish
Pages (from-to)2734-2736
Number of pages3
JournalJournal of the American Ceramic Society
Volume84
Issue number11
Publication statusPublished - 2001 Nov 1
Externally publishedYes

Fingerprint

Ytterbium
Scavenging
grain boundary
Zirconia
Grain boundaries
conductivity
Heat treatment
Silicon
Heating rate
Sintering
silicon
grain size
heating
zirconium oxide

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Scavenging of Siliceous Grain-Boundary Phase of 8-mol%-Ytterbia-Stabilized Zirconia without Additive. / Lee, Jong Heun; Mori, Toshiyuki; Li, Ji Guang; Ikegami, Takayasu; Drennan, John; Kim, Doh Yeon.

In: Journal of the American Ceramic Society, Vol. 84, No. 11, 01.11.2001, p. 2734-2736.

Research output: Contribution to journalArticle

Lee, Jong Heun ; Mori, Toshiyuki ; Li, Ji Guang ; Ikegami, Takayasu ; Drennan, John ; Kim, Doh Yeon. / Scavenging of Siliceous Grain-Boundary Phase of 8-mol%-Ytterbia-Stabilized Zirconia without Additive. In: Journal of the American Ceramic Society. 2001 ; Vol. 84, No. 11. pp. 2734-2736.
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