Abstract
The grain-boundary conductivity (σgb) of 8-mol%-ytterbia-stabilized zirconia increased markedly with heat treatment between 1000° and 1300°C with a slow heating rate (0.1°C/ min) before sintering. The extent of the σgb improvement was the same or larger than that via Al2O3 addition. The heat treatment did not affect the grain-interior conduction when sintered at 1600°C, while Al2O3-derived scavenging significantly did, given the larger increment of total conductivity in the heat-treated sample. The formation of a silicon-containing phase in a discrete form was suggested as a possible route of scavenging the resistive phase from the correlation between average grain size and σgb.
| Original language | English |
|---|---|
| Pages (from-to) | 2734-2736 |
| Number of pages | 3 |
| Journal | Journal of the American Ceramic Society |
| Volume | 84 |
| Issue number | 11 |
| Publication status | Published - 2001 Nov 1 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Ceramics and Composites
Cite this
Scavenging of Siliceous Grain-Boundary Phase of 8-mol%-Ytterbia-Stabilized Zirconia without Additive. / Lee, Jong Heun; Mori, Toshiyuki; Li, Ji Guang; Ikegami, Takayasu; Drennan, John; Kim, Doh Yeon.
In: Journal of the American Ceramic Society, Vol. 84, No. 11, 01.11.2001, p. 2734-2736.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Scavenging of Siliceous Grain-Boundary Phase of 8-mol%-Ytterbia-Stabilized Zirconia without Additive
AU - Lee, Jong Heun
AU - Mori, Toshiyuki
AU - Li, Ji Guang
AU - Ikegami, Takayasu
AU - Drennan, John
AU - Kim, Doh Yeon
PY - 2001/11/1
Y1 - 2001/11/1
N2 - The grain-boundary conductivity (σgb) of 8-mol%-ytterbia-stabilized zirconia increased markedly with heat treatment between 1000° and 1300°C with a slow heating rate (0.1°C/ min) before sintering. The extent of the σgb improvement was the same or larger than that via Al2O3 addition. The heat treatment did not affect the grain-interior conduction when sintered at 1600°C, while Al2O3-derived scavenging significantly did, given the larger increment of total conductivity in the heat-treated sample. The formation of a silicon-containing phase in a discrete form was suggested as a possible route of scavenging the resistive phase from the correlation between average grain size and σgb.
AB - The grain-boundary conductivity (σgb) of 8-mol%-ytterbia-stabilized zirconia increased markedly with heat treatment between 1000° and 1300°C with a slow heating rate (0.1°C/ min) before sintering. The extent of the σgb improvement was the same or larger than that via Al2O3 addition. The heat treatment did not affect the grain-interior conduction when sintered at 1600°C, while Al2O3-derived scavenging significantly did, given the larger increment of total conductivity in the heat-treated sample. The formation of a silicon-containing phase in a discrete form was suggested as a possible route of scavenging the resistive phase from the correlation between average grain size and σgb.
UR - http://www.scopus.com/inward/record.url?scp=0035526607&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035526607&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0035526607
VL - 84
SP - 2734
EP - 2736
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
SN - 0002-7820
IS - 11
ER -