Schottky barrier characteristics of Pt contacts to n -type InGaN

Ja Soon Jang; Donghwan Kim; Tae Yeon Seong

doi:10.1063/1.2187274

Schottky barrier characteristics of Pt contacts to n -type InGaN

Ja Soon Jang, Donghwan Kim, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

64 Citations (Scopus)

Abstract

Schottky barrier behaviors of Pt contacts to n-InGaN have been investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) methods. It is found that the Schottky barrier heights (SBHs) determined by thermionic emission (TE) and thermionic field emission (TFE) modes using the I-V data are quite different from each other. However, the SBHs obtained by the TFE mode are fairly similar to theoretically calculated values, which are in good agreement with the results obtained by the C-V method. It is also shown that the SBHs and the ideality factors calculated by the TE and TFE modes decrease with increasing annealing temperature. The different SBHs obtained by the TE and TFE modes, the annealing temperature dependence of the SBHs, and the ideality factors are described and discussed in terms of the presence of different types of native point defects near the InGaN surface.

Original language	English
Article number	073704
Journal	Journal of Applied Physics
Volume	99
Issue number	7
DOIs	https://doi.org/10.1063/1.2187274
Publication status	Published - 2006 Apr

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.2187274

Fingerprint Dive into the research topics of 'Schottky barrier characteristics of Pt contacts to n -type InGaN'. Together they form a unique fingerprint.

Cite this

@article{2a7a2539aa1640269d88982f3301a575,

title = "Schottky barrier characteristics of Pt contacts to n -type InGaN",

abstract = "Schottky barrier behaviors of Pt contacts to n-InGaN have been investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) methods. It is found that the Schottky barrier heights (SBHs) determined by thermionic emission (TE) and thermionic field emission (TFE) modes using the I-V data are quite different from each other. However, the SBHs obtained by the TFE mode are fairly similar to theoretically calculated values, which are in good agreement with the results obtained by the C-V method. It is also shown that the SBHs and the ideality factors calculated by the TE and TFE modes decrease with increasing annealing temperature. The different SBHs obtained by the TE and TFE modes, the annealing temperature dependence of the SBHs, and the ideality factors are described and discussed in terms of the presence of different types of native point defects near the InGaN surface.",

author = "Jang, {Ja Soon} and Donghwan Kim and Seong, {Tae Yeon}",

year = "2006",

month = apr,

doi = "10.1063/1.2187274",

language = "English",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Schottky barrier characteristics of Pt contacts to n -type InGaN

AU - Jang, Ja Soon

AU - Kim, Donghwan

AU - Seong, Tae Yeon

PY - 2006/4

Y1 - 2006/4

N2 - Schottky barrier behaviors of Pt contacts to n-InGaN have been investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) methods. It is found that the Schottky barrier heights (SBHs) determined by thermionic emission (TE) and thermionic field emission (TFE) modes using the I-V data are quite different from each other. However, the SBHs obtained by the TFE mode are fairly similar to theoretically calculated values, which are in good agreement with the results obtained by the C-V method. It is also shown that the SBHs and the ideality factors calculated by the TE and TFE modes decrease with increasing annealing temperature. The different SBHs obtained by the TE and TFE modes, the annealing temperature dependence of the SBHs, and the ideality factors are described and discussed in terms of the presence of different types of native point defects near the InGaN surface.

AB - Schottky barrier behaviors of Pt contacts to n-InGaN have been investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) methods. It is found that the Schottky barrier heights (SBHs) determined by thermionic emission (TE) and thermionic field emission (TFE) modes using the I-V data are quite different from each other. However, the SBHs obtained by the TFE mode are fairly similar to theoretically calculated values, which are in good agreement with the results obtained by the C-V method. It is also shown that the SBHs and the ideality factors calculated by the TE and TFE modes decrease with increasing annealing temperature. The different SBHs obtained by the TE and TFE modes, the annealing temperature dependence of the SBHs, and the ideality factors are described and discussed in terms of the presence of different types of native point defects near the InGaN surface.

UR - http://www.scopus.com/inward/record.url?scp=33645912913&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645912913&partnerID=8YFLogxK

U2 - 10.1063/1.2187274

DO - 10.1063/1.2187274

M3 - Article

AN - SCOPUS:33645912913

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 073704

ER -