Schottky Barrier Height Modulation Using Interface Characteristics of MoS 2 Interlayer for Contact Structure

Seung Hwan Kim, Kyu Hyun Han, Gwang Sik Kim, Seung Geun Kim, Jiyoung Kim, Hyun-Yong Yu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Schottky barrier height (SBH) engineering of contact structures is a primary challenge to achieve high performance in nanoelectronic and optoelectronic applications. Although SBH can be lowered through various Fermi-level (FL) unpinning techniques, such as a metal/interlayer/semiconductor (MIS) structure, the room for contact metal adoption is too narrow because the work function of contact metals should be near the conduction band edge (CBE) of the semiconductor to achieve low SBH. Here, we propose a novel structure, the metal/transition metal dichalcogenide/semiconductor structure, as a contact structure that can effectively lower the SBH with wide room for contact metal adoption. A perpendicularly integrated molybdenum disulfide (MoS 2 ) interlayer effectively alleviates FL pinning by reducing metal-induced gap states at the MoS 2 /semiconductor interface. Additionally, it can induce strong FL pinning of contact metals near its CBE at the metal/MoS 2 interface. The technique using FL pinning and unpinning at metal/MoS 2 /semiconductor interfaces is first introduced in the MIS scheme to allow the use of various contact metals. Consequently, significant reductions of the SBH from 0.48 to 0.12 eV for GaAs and from 0.56 to 0.10 eV for Ge are achieved with several different contact metals. This work significantly reduces the dependence on contact metals with lowest SBH and proposes a new way of overcoming current severe contact issues for future nanoelectronic and optoelectronic applications.

Original languageEnglish
Pages (from-to)6230-6237
Number of pages8
JournalACS Applied Materials and Interfaces
Volume11
Issue number6
DOIs
Publication statusPublished - 2019 Feb 13

Fingerprint

Metals
Modulation
Semiconductor materials
Fermi level
Nanoelectronics
Conduction bands
Optoelectronic devices
Transition metals
Molybdenum

Keywords

  • Fermi-level pinning
  • germanium
  • III-V semiconductor
  • metal-induced gap state
  • molybdenum disulfide
  • Schottky barrier height
  • source/drain contact

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Schottky Barrier Height Modulation Using Interface Characteristics of MoS 2 Interlayer for Contact Structure . / Kim, Seung Hwan; Han, Kyu Hyun; Kim, Gwang Sik; Kim, Seung Geun; Kim, Jiyoung; Yu, Hyun-Yong.

In: ACS Applied Materials and Interfaces, Vol. 11, No. 6, 13.02.2019, p. 6230-6237.

Research output: Contribution to journalArticle

Kim, Seung Hwan ; Han, Kyu Hyun ; Kim, Gwang Sik ; Kim, Seung Geun ; Kim, Jiyoung ; Yu, Hyun-Yong. / Schottky Barrier Height Modulation Using Interface Characteristics of MoS 2 Interlayer for Contact Structure In: ACS Applied Materials and Interfaces. 2019 ; Vol. 11, No. 6. pp. 6230-6237.
@article{192d8ad6a18c4746a74b8a6a78c1ccee,
title = "Schottky Barrier Height Modulation Using Interface Characteristics of MoS 2 Interlayer for Contact Structure",
abstract = "Schottky barrier height (SBH) engineering of contact structures is a primary challenge to achieve high performance in nanoelectronic and optoelectronic applications. Although SBH can be lowered through various Fermi-level (FL) unpinning techniques, such as a metal/interlayer/semiconductor (MIS) structure, the room for contact metal adoption is too narrow because the work function of contact metals should be near the conduction band edge (CBE) of the semiconductor to achieve low SBH. Here, we propose a novel structure, the metal/transition metal dichalcogenide/semiconductor structure, as a contact structure that can effectively lower the SBH with wide room for contact metal adoption. A perpendicularly integrated molybdenum disulfide (MoS 2 ) interlayer effectively alleviates FL pinning by reducing metal-induced gap states at the MoS 2 /semiconductor interface. Additionally, it can induce strong FL pinning of contact metals near its CBE at the metal/MoS 2 interface. The technique using FL pinning and unpinning at metal/MoS 2 /semiconductor interfaces is first introduced in the MIS scheme to allow the use of various contact metals. Consequently, significant reductions of the SBH from 0.48 to 0.12 eV for GaAs and from 0.56 to 0.10 eV for Ge are achieved with several different contact metals. This work significantly reduces the dependence on contact metals with lowest SBH and proposes a new way of overcoming current severe contact issues for future nanoelectronic and optoelectronic applications.",
keywords = "Fermi-level pinning, germanium, III-V semiconductor, metal-induced gap state, molybdenum disulfide, Schottky barrier height, source/drain contact",
author = "Kim, {Seung Hwan} and Han, {Kyu Hyun} and Kim, {Gwang Sik} and Kim, {Seung Geun} and Jiyoung Kim and Hyun-Yong Yu",
year = "2019",
month = "2",
day = "13",
doi = "10.1021/acsami.8b18860",
language = "English",
volume = "11",
pages = "6230--6237",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "6",

}

TY - JOUR

T1 - Schottky Barrier Height Modulation Using Interface Characteristics of MoS 2 Interlayer for Contact Structure

AU - Kim, Seung Hwan

AU - Han, Kyu Hyun

AU - Kim, Gwang Sik

AU - Kim, Seung Geun

AU - Kim, Jiyoung

AU - Yu, Hyun-Yong

PY - 2019/2/13

Y1 - 2019/2/13

N2 - Schottky barrier height (SBH) engineering of contact structures is a primary challenge to achieve high performance in nanoelectronic and optoelectronic applications. Although SBH can be lowered through various Fermi-level (FL) unpinning techniques, such as a metal/interlayer/semiconductor (MIS) structure, the room for contact metal adoption is too narrow because the work function of contact metals should be near the conduction band edge (CBE) of the semiconductor to achieve low SBH. Here, we propose a novel structure, the metal/transition metal dichalcogenide/semiconductor structure, as a contact structure that can effectively lower the SBH with wide room for contact metal adoption. A perpendicularly integrated molybdenum disulfide (MoS 2 ) interlayer effectively alleviates FL pinning by reducing metal-induced gap states at the MoS 2 /semiconductor interface. Additionally, it can induce strong FL pinning of contact metals near its CBE at the metal/MoS 2 interface. The technique using FL pinning and unpinning at metal/MoS 2 /semiconductor interfaces is first introduced in the MIS scheme to allow the use of various contact metals. Consequently, significant reductions of the SBH from 0.48 to 0.12 eV for GaAs and from 0.56 to 0.10 eV for Ge are achieved with several different contact metals. This work significantly reduces the dependence on contact metals with lowest SBH and proposes a new way of overcoming current severe contact issues for future nanoelectronic and optoelectronic applications.

AB - Schottky barrier height (SBH) engineering of contact structures is a primary challenge to achieve high performance in nanoelectronic and optoelectronic applications. Although SBH can be lowered through various Fermi-level (FL) unpinning techniques, such as a metal/interlayer/semiconductor (MIS) structure, the room for contact metal adoption is too narrow because the work function of contact metals should be near the conduction band edge (CBE) of the semiconductor to achieve low SBH. Here, we propose a novel structure, the metal/transition metal dichalcogenide/semiconductor structure, as a contact structure that can effectively lower the SBH with wide room for contact metal adoption. A perpendicularly integrated molybdenum disulfide (MoS 2 ) interlayer effectively alleviates FL pinning by reducing metal-induced gap states at the MoS 2 /semiconductor interface. Additionally, it can induce strong FL pinning of contact metals near its CBE at the metal/MoS 2 interface. The technique using FL pinning and unpinning at metal/MoS 2 /semiconductor interfaces is first introduced in the MIS scheme to allow the use of various contact metals. Consequently, significant reductions of the SBH from 0.48 to 0.12 eV for GaAs and from 0.56 to 0.10 eV for Ge are achieved with several different contact metals. This work significantly reduces the dependence on contact metals with lowest SBH and proposes a new way of overcoming current severe contact issues for future nanoelectronic and optoelectronic applications.

KW - Fermi-level pinning

KW - germanium

KW - III-V semiconductor

KW - metal-induced gap state

KW - molybdenum disulfide

KW - Schottky barrier height

KW - source/drain contact

UR - http://www.scopus.com/inward/record.url?scp=85061599203&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85061599203&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b18860

DO - 10.1021/acsami.8b18860

M3 - Article

VL - 11

SP - 6230

EP - 6237

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 6

ER -