Schottky contacted nanowire field-effect sensing device with intrinsic amplification

Kyeong Sik Shin, Kyunghoon Lee, Jung ho Park, Ji Yoon Kang, Chi On Chui

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this letter, we present a novel semiconductor nanowire field-effect transistor-based sensing device with an intrinsic amplification mechanism. In this novel device, a nanowire field-effect transistor is integrated with an orthogonal sensing nanowire that amplifies any detected signal. The device operating and intrinsic amplification mechanism has been proposed and experimentally validated. Fabricated exclusively using the topdown processes, the novel device prototypes have demonstrated an appreciable improvement in photodetection against the cofabricated generic nanowire field-effect transistor sensors.

Original languageEnglish
Article number5594616
Pages (from-to)1317-1319
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number11
DOIs
Publication statusPublished - 2010 Nov 1

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Nanowires
Amplification
Field effect transistors
Semiconductor materials
Sensors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Schottky contacted nanowire field-effect sensing device with intrinsic amplification. / Shin, Kyeong Sik; Lee, Kyunghoon; Park, Jung ho; Kang, Ji Yoon; Chui, Chi On.

In: IEEE Electron Device Letters, Vol. 31, No. 11, 5594616, 01.11.2010, p. 1317-1319.

Research output: Contribution to journalArticle

Shin, Kyeong Sik ; Lee, Kyunghoon ; Park, Jung ho ; Kang, Ji Yoon ; Chui, Chi On. / Schottky contacted nanowire field-effect sensing device with intrinsic amplification. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 11. pp. 1317-1319.
@article{85706dc5e3114318b20c5b6c7bda56a4,
title = "Schottky contacted nanowire field-effect sensing device with intrinsic amplification",
abstract = "In this letter, we present a novel semiconductor nanowire field-effect transistor-based sensing device with an intrinsic amplification mechanism. In this novel device, a nanowire field-effect transistor is integrated with an orthogonal sensing nanowire that amplifies any detected signal. The device operating and intrinsic amplification mechanism has been proposed and experimentally validated. Fabricated exclusively using the topdown processes, the novel device prototypes have demonstrated an appreciable improvement in photodetection against the cofabricated generic nanowire field-effect transistor sensors.",
keywords = "Biosensor, field-effect device, nanowire, photodetector, Schottky contact",
author = "Shin, {Kyeong Sik} and Kyunghoon Lee and Park, {Jung ho} and Kang, {Ji Yoon} and Chui, {Chi On}",
year = "2010",
month = "11",
day = "1",
doi = "10.1109/LED.2010.2070833",
language = "English",
volume = "31",
pages = "1317--1319",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",

}

TY - JOUR

T1 - Schottky contacted nanowire field-effect sensing device with intrinsic amplification

AU - Shin, Kyeong Sik

AU - Lee, Kyunghoon

AU - Park, Jung ho

AU - Kang, Ji Yoon

AU - Chui, Chi On

PY - 2010/11/1

Y1 - 2010/11/1

N2 - In this letter, we present a novel semiconductor nanowire field-effect transistor-based sensing device with an intrinsic amplification mechanism. In this novel device, a nanowire field-effect transistor is integrated with an orthogonal sensing nanowire that amplifies any detected signal. The device operating and intrinsic amplification mechanism has been proposed and experimentally validated. Fabricated exclusively using the topdown processes, the novel device prototypes have demonstrated an appreciable improvement in photodetection against the cofabricated generic nanowire field-effect transistor sensors.

AB - In this letter, we present a novel semiconductor nanowire field-effect transistor-based sensing device with an intrinsic amplification mechanism. In this novel device, a nanowire field-effect transistor is integrated with an orthogonal sensing nanowire that amplifies any detected signal. The device operating and intrinsic amplification mechanism has been proposed and experimentally validated. Fabricated exclusively using the topdown processes, the novel device prototypes have demonstrated an appreciable improvement in photodetection against the cofabricated generic nanowire field-effect transistor sensors.

KW - Biosensor

KW - field-effect device

KW - nanowire

KW - photodetector

KW - Schottky contact

UR - http://www.scopus.com/inward/record.url?scp=78049296974&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78049296974&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2070833

DO - 10.1109/LED.2010.2070833

M3 - Article

AN - SCOPUS:78049296974

VL - 31

SP - 1317

EP - 1319

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 11

M1 - 5594616

ER -