Schottky diodes based on a single GaN nanowire

Jae Ryoung Kim; Hwangyou Oh; Hye Mi So; Ju Jin Kim; Jinhee Kim; Cheol Jin Lee; Seung Chul Lyu

doi:10.1088/0957-4484/13/5/333

Schottky diodes based on a single GaN nanowire

Jae Ryoung Kim, Hwangyou Oh, Hye Mi So, Ju Jin Kim, Jinhee Kim, Cheol Jin Lee, Seung Chul Lyu

Research output: Contribution to journal › Article › peer-review

83 Citations (Scopus)

Abstract

On a single GaN nanowire, obtained by chemical vapour deposition, several Schottky-junction diodes were fabricated and their electrical transport properties were studied. Alternately attached metal electrodes of Al and Ti/Au formed a Schottky barrier junction (for Al) or an ohmic contact (for Ti/Au), resulting in several diodes on a single nanowire. The current-voltage measurements exhibited clear rectifying behaviour and no reverse-bias breakdown was observed up to the measured voltage, -5 V. The forward-bias threshold voltage was observed to decrease linearly with temperature, from 0.4 V at 280 K to 1 V at 10 K.

Original language	English
Pages (from-to)	701-704
Number of pages	4
Journal	Nanotechnology
Volume	13
Issue number	5
DOIs	https://doi.org/10.1088/0957-4484/13/5/333
Publication status	Published - 2002 Oct
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1088/0957-4484/13/5/333

Cite this

@article{fd1038f844614635bf3b1d43c8382a4a,

title = "Schottky diodes based on a single GaN nanowire",

abstract = "On a single GaN nanowire, obtained by chemical vapour deposition, several Schottky-junction diodes were fabricated and their electrical transport properties were studied. Alternately attached metal electrodes of Al and Ti/Au formed a Schottky barrier junction (for Al) or an ohmic contact (for Ti/Au), resulting in several diodes on a single nanowire. The current-voltage measurements exhibited clear rectifying behaviour and no reverse-bias breakdown was observed up to the measured voltage, -5 V. The forward-bias threshold voltage was observed to decrease linearly with temperature, from 0.4 V at 280 K to 1 V at 10 K.",

author = "Kim, {Jae Ryoung} and Hwangyou Oh and So, {Hye Mi} and Kim, {Ju Jin} and Jinhee Kim and Lee, {Cheol Jin} and Lyu, {Seung Chul}",

year = "2002",

month = oct,

doi = "10.1088/0957-4484/13/5/333",

language = "English",

volume = "13",

pages = "701--704",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "5",

}

TY - JOUR

T1 - Schottky diodes based on a single GaN nanowire

AU - Kim, Jae Ryoung

AU - Oh, Hwangyou

AU - So, Hye Mi

AU - Kim, Ju Jin

AU - Kim, Jinhee

AU - Lee, Cheol Jin

AU - Lyu, Seung Chul

PY - 2002/10

Y1 - 2002/10

N2 - On a single GaN nanowire, obtained by chemical vapour deposition, several Schottky-junction diodes were fabricated and their electrical transport properties were studied. Alternately attached metal electrodes of Al and Ti/Au formed a Schottky barrier junction (for Al) or an ohmic contact (for Ti/Au), resulting in several diodes on a single nanowire. The current-voltage measurements exhibited clear rectifying behaviour and no reverse-bias breakdown was observed up to the measured voltage, -5 V. The forward-bias threshold voltage was observed to decrease linearly with temperature, from 0.4 V at 280 K to 1 V at 10 K.

AB - On a single GaN nanowire, obtained by chemical vapour deposition, several Schottky-junction diodes were fabricated and their electrical transport properties were studied. Alternately attached metal electrodes of Al and Ti/Au formed a Schottky barrier junction (for Al) or an ohmic contact (for Ti/Au), resulting in several diodes on a single nanowire. The current-voltage measurements exhibited clear rectifying behaviour and no reverse-bias breakdown was observed up to the measured voltage, -5 V. The forward-bias threshold voltage was observed to decrease linearly with temperature, from 0.4 V at 280 K to 1 V at 10 K.

UR - http://www.scopus.com/inward/record.url?scp=0036801206&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/13/5/333

DO - 10.1088/0957-4484/13/5/333

M3 - Article

AN - SCOPUS:0036801206

SN - 0957-4484

VL - 13

SP - 701

EP - 704

JO - Nanotechnology

JF - Nanotechnology

IS - 5

ER -

Schottky diodes based on a single GaN nanowire

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this