Schottky diodes based on a single GaN nanowire

Jae Ryoung Kim, Hwangyou Oh, Hye Mi So, Ju Jin Kim, Jinhee Kim, Cheol Jin Lee, Seung Chul Lyu

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

On a single GaN nanowire, obtained by chemical vapour deposition, several Schottky-junction diodes were fabricated and their electrical transport properties were studied. Alternately attached metal electrodes of Al and Ti/Au formed a Schottky barrier junction (for Al) or an ohmic contact (for Ti/Au), resulting in several diodes on a single nanowire. The current-voltage measurements exhibited clear rectifying behaviour and no reverse-bias breakdown was observed up to the measured voltage, -5 V. The forward-bias threshold voltage was observed to decrease linearly with temperature, from 0.4 V at 280 K to 1 V at 10 K.

Original languageEnglish
Pages (from-to)701-704
Number of pages4
JournalNanotechnology
Volume13
Issue number5
DOIs
Publication statusPublished - 2002 Oct 1
Externally publishedYes

Fingerprint

Nanowires
Schottky diodes
Diodes
nanowires
junction diodes
Ohmic contacts
Voltage measurement
Electric current measurement
Bias voltage
Threshold voltage
threshold voltage
Transport properties
electrical measurement
Chemical vapor deposition
electric contacts
Electrodes
transport properties
breakdown
Metals
diodes

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Kim, J. R., Oh, H., So, H. M., Kim, J. J., Kim, J., Lee, C. J., & Lyu, S. C. (2002). Schottky diodes based on a single GaN nanowire. Nanotechnology, 13(5), 701-704. https://doi.org/10.1088/0957-4484/13/5/333

Schottky diodes based on a single GaN nanowire. / Kim, Jae Ryoung; Oh, Hwangyou; So, Hye Mi; Kim, Ju Jin; Kim, Jinhee; Lee, Cheol Jin; Lyu, Seung Chul.

In: Nanotechnology, Vol. 13, No. 5, 01.10.2002, p. 701-704.

Research output: Contribution to journalArticle

Kim, JR, Oh, H, So, HM, Kim, JJ, Kim, J, Lee, CJ & Lyu, SC 2002, 'Schottky diodes based on a single GaN nanowire', Nanotechnology, vol. 13, no. 5, pp. 701-704. https://doi.org/10.1088/0957-4484/13/5/333
Kim, Jae Ryoung ; Oh, Hwangyou ; So, Hye Mi ; Kim, Ju Jin ; Kim, Jinhee ; Lee, Cheol Jin ; Lyu, Seung Chul. / Schottky diodes based on a single GaN nanowire. In: Nanotechnology. 2002 ; Vol. 13, No. 5. pp. 701-704.
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