Schottky diodes based on a single GaN nanowire

Jae Ryoung Kim, Hwangyou Oh, Hye Mi So, Ju Jin Kim, Jinhee Kim, Cheol Jin Lee, Seung Chul Lyu

Research output: Contribution to journalArticle

81 Citations (Scopus)

Abstract

On a single GaN nanowire, obtained by chemical vapour deposition, several Schottky-junction diodes were fabricated and their electrical transport properties were studied. Alternately attached metal electrodes of Al and Ti/Au formed a Schottky barrier junction (for Al) or an ohmic contact (for Ti/Au), resulting in several diodes on a single nanowire. The current-voltage measurements exhibited clear rectifying behaviour and no reverse-bias breakdown was observed up to the measured voltage, -5 V. The forward-bias threshold voltage was observed to decrease linearly with temperature, from 0.4 V at 280 K to 1 V at 10 K.

Original languageEnglish
Pages (from-to)701-704
Number of pages4
JournalNanotechnology
Volume13
Issue number5
DOIs
Publication statusPublished - 2002 Oct 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Schottky diodes based on a single GaN nanowire'. Together they form a unique fingerprint.

  • Cite this

    Kim, J. R., Oh, H., So, H. M., Kim, J. J., Kim, J., Lee, C. J., & Lyu, S. C. (2002). Schottky diodes based on a single GaN nanowire. Nanotechnology, 13(5), 701-704. https://doi.org/10.1088/0957-4484/13/5/333