Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth

Patrick Kung, Danielle Walker, Peter Sandvik, Melissa Hamilton, Jacqueline Diaz, In-Hwan Lee, Manijeh Razeghi

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

We report the growth and character on of Schottky based metal-semiconductor-metal ultraviolet photodetectors fabricated on lateral epitaxially overgrown GaN films. The lateral epitaxial overgrowth of GaN was carried out on basal plane sapphire substrates by low pressure metalorganic chemical vapor deposition and exhibited lateral growth rates more than 5 times as high as vertical growth rates. The spectral responsivity, the dependence on bias voltage, on incident optical power, and the time response of these photodetectors have been characterized. Two detector orientations were investigated: one with the interdigitated finger pattern parallel and the other perpendicular to the underlying SiOx mask stripes.

Original languageEnglish
Pages (from-to)223-229
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3629
Publication statusPublished - 1999 Jan 1
Externally publishedYes
EventProceedings of the 1999 Photodetectors: Materials and Devices IV - San Jose, CA, USA
Duration: 1999 Jan 271999 Jan 29

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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