Schottky-type polycrystalline CdZnTe X-ray detectors

Ki Hyun Kim, Shin Hang Cho, Jong Hee Suh, Jae Ho Won, Jin Ki Hong, Sun Ung Kim

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The polycrystalline CdZnTe:Cl thick films which have high resistivity about 5 × 109 Ω cm are grown by thermal evaporation method. The leakage currents of as-deposited CdZnTe layers are still too high to operate as medical applications. The blocking layer of Schottky type was formed on the stoichiometric surface of polycrystalline CdZnTe layers to suppress the leakage current of polycrystalline CdZnTe X-ray detectors. The polycrystalline CdZnTe Schottky barrier diodes with indium contact exhibit the low leakage current (14 nA/cm2) at 40 V due to its high barrier height (φ{symbol}b = 0.80 eV). In X-ray image acquisition with Schottky-type linear array polycrystalline CdZnTe X-ray detector, we have obtained the promising results and proved the possibility of polycrystalline CdZnTe for applications as a flat panel X-ray detector.

Original languageEnglish
Pages (from-to)306-310
Number of pages5
JournalCurrent Applied Physics
Volume9
Issue number2
DOIs
Publication statusPublished - 2009 Mar 1

Keywords

  • CdZnTe
  • Leakage current
  • Polycrystalline
  • Schottky diode
  • X-ray detector

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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  • Cite this

    Kim, K. H., Cho, S. H., Suh, J. H., Won, J. H., Hong, J. K., & Kim, S. U. (2009). Schottky-type polycrystalline CdZnTe X-ray detectors. Current Applied Physics, 9(2), 306-310. https://doi.org/10.1016/j.cap.2008.01.020