Schottky-type polycrystalline CdZnTe X-ray detectors

Ki Hyun Kim; Shin Hang Cho; Jong Hee Suh; Jae Ho Won; Jin Ki Hong; Sun Ung Kim

doi:10.1016/j.cap.2008.01.020

Schottky-type polycrystalline CdZnTe X-ray detectors

Ki Hyun Kim, Shin Hang Cho, Jong Hee Suh, Jae Ho Won, Jin Ki Hong, Sun Ung Kim

School of Health and Environmental Science

Research output: Contribution to journal › Article

21 Citations (Scopus)

Abstract

The polycrystalline CdZnTe:Cl thick films which have high resistivity about 5 × 10⁹ Ω cm are grown by thermal evaporation method. The leakage currents of as-deposited CdZnTe layers are still too high to operate as medical applications. The blocking layer of Schottky type was formed on the stoichiometric surface of polycrystalline CdZnTe layers to suppress the leakage current of polycrystalline CdZnTe X-ray detectors. The polycrystalline CdZnTe Schottky barrier diodes with indium contact exhibit the low leakage current (14 nA/cm²) at 40 V due to its high barrier height (φ{symbol}_b = 0.80 eV). In X-ray image acquisition with Schottky-type linear array polycrystalline CdZnTe X-ray detector, we have obtained the promising results and proved the possibility of polycrystalline CdZnTe for applications as a flat panel X-ray detector.

Original language	English
Pages (from-to)	306-310
Number of pages	5
Journal	Current Applied Physics
Volume	9
Issue number	2
DOIs	https://doi.org/10.1016/j.cap.2008.01.020
Publication status	Published - 2009 Mar 1

Keywords

CdZnTe
Leakage current
Polycrystalline
Schottky diode
X-ray detector

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

Access to Document

10.1016/j.cap.2008.01.020

Fingerprint Dive into the research topics of 'Schottky-type polycrystalline CdZnTe X-ray detectors'. Together they form a unique fingerprint.

Cite this

Kim, K. H., Cho, S. H., Suh, J. H., Won, J. H., Hong, J. K., & Kim, S. U. (2009). Schottky-type polycrystalline CdZnTe X-ray detectors. Current Applied Physics, 9(2), 306-310. https://doi.org/10.1016/j.cap.2008.01.020

@article{f36cca7a843b4b2d91405cece6671089,

title = "Schottky-type polycrystalline CdZnTe X-ray detectors",

abstract = "The polycrystalline CdZnTe:Cl thick films which have high resistivity about 5 × 109 Ω cm are grown by thermal evaporation method. The leakage currents of as-deposited CdZnTe layers are still too high to operate as medical applications. The blocking layer of Schottky type was formed on the stoichiometric surface of polycrystalline CdZnTe layers to suppress the leakage current of polycrystalline CdZnTe X-ray detectors. The polycrystalline CdZnTe Schottky barrier diodes with indium contact exhibit the low leakage current (14 nA/cm2) at 40 V due to its high barrier height (φ{symbol}b = 0.80 eV). In X-ray image acquisition with Schottky-type linear array polycrystalline CdZnTe X-ray detector, we have obtained the promising results and proved the possibility of polycrystalline CdZnTe for applications as a flat panel X-ray detector.",

keywords = "CdZnTe, Leakage current, Polycrystalline, Schottky diode, X-ray detector",

author = "Kim, {Ki Hyun} and Cho, {Shin Hang} and Suh, {Jong Hee} and Won, {Jae Ho} and Hong, {Jin Ki} and Kim, {Sun Ung}",

year = "2009",

month = mar,

day = "1",

doi = "10.1016/j.cap.2008.01.020",

language = "English",

volume = "9",

pages = "306--310",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - Schottky-type polycrystalline CdZnTe X-ray detectors

AU - Kim, Ki Hyun

AU - Cho, Shin Hang

AU - Suh, Jong Hee

AU - Won, Jae Ho

AU - Hong, Jin Ki

AU - Kim, Sun Ung

PY - 2009/3/1

Y1 - 2009/3/1

N2 - The polycrystalline CdZnTe:Cl thick films which have high resistivity about 5 × 109 Ω cm are grown by thermal evaporation method. The leakage currents of as-deposited CdZnTe layers are still too high to operate as medical applications. The blocking layer of Schottky type was formed on the stoichiometric surface of polycrystalline CdZnTe layers to suppress the leakage current of polycrystalline CdZnTe X-ray detectors. The polycrystalline CdZnTe Schottky barrier diodes with indium contact exhibit the low leakage current (14 nA/cm2) at 40 V due to its high barrier height (φ{symbol}b = 0.80 eV). In X-ray image acquisition with Schottky-type linear array polycrystalline CdZnTe X-ray detector, we have obtained the promising results and proved the possibility of polycrystalline CdZnTe for applications as a flat panel X-ray detector.

AB - The polycrystalline CdZnTe:Cl thick films which have high resistivity about 5 × 109 Ω cm are grown by thermal evaporation method. The leakage currents of as-deposited CdZnTe layers are still too high to operate as medical applications. The blocking layer of Schottky type was formed on the stoichiometric surface of polycrystalline CdZnTe layers to suppress the leakage current of polycrystalline CdZnTe X-ray detectors. The polycrystalline CdZnTe Schottky barrier diodes with indium contact exhibit the low leakage current (14 nA/cm2) at 40 V due to its high barrier height (φ{symbol}b = 0.80 eV). In X-ray image acquisition with Schottky-type linear array polycrystalline CdZnTe X-ray detector, we have obtained the promising results and proved the possibility of polycrystalline CdZnTe for applications as a flat panel X-ray detector.

KW - CdZnTe

KW - Leakage current

KW - Polycrystalline

KW - Schottky diode

KW - X-ray detector

UR - http://www.scopus.com/inward/record.url?scp=55049094830&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55049094830&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2008.01.020

DO - 10.1016/j.cap.2008.01.020

M3 - Article

AN - SCOPUS:55049094830

VL - 9

SP - 306

EP - 310

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 2

ER -