Abstract
The polycrystalline CdZnTe:Cl thick films which have high resistivity about 5 × 109 Ω cm are grown by thermal evaporation method. The leakage currents of as-deposited CdZnTe layers are still too high to operate as medical applications. The blocking layer of Schottky type was formed on the stoichiometric surface of polycrystalline CdZnTe layers to suppress the leakage current of polycrystalline CdZnTe X-ray detectors. The polycrystalline CdZnTe Schottky barrier diodes with indium contact exhibit the low leakage current (14 nA/cm2) at 40 V due to its high barrier height (φ{symbol}b = 0.80 eV). In X-ray image acquisition with Schottky-type linear array polycrystalline CdZnTe X-ray detector, we have obtained the promising results and proved the possibility of polycrystalline CdZnTe for applications as a flat panel X-ray detector.
| Original language | English |
|---|---|
| Pages (from-to) | 306-310 |
| Number of pages | 5 |
| Journal | Current Applied Physics |
| Volume | 9 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2009 Mar 1 |
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Keywords
- CdZnTe
- Leakage current
- Polycrystalline
- Schottky diode
- X-ray detector
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
Schottky-type polycrystalline CdZnTe X-ray detectors. / Kim, Kihyun; Cho, Shin Hang; Suh, Jong Hee; Won, Jae Ho; Hong, Jin Ki; Kim, Sun Ung.
In: Current Applied Physics, Vol. 9, No. 2, 01.03.2009, p. 306-310.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Schottky-type polycrystalline CdZnTe X-ray detectors
AU - Kim, Kihyun
AU - Cho, Shin Hang
AU - Suh, Jong Hee
AU - Won, Jae Ho
AU - Hong, Jin Ki
AU - Kim, Sun Ung
PY - 2009/3/1
Y1 - 2009/3/1
N2 - The polycrystalline CdZnTe:Cl thick films which have high resistivity about 5 × 109 Ω cm are grown by thermal evaporation method. The leakage currents of as-deposited CdZnTe layers are still too high to operate as medical applications. The blocking layer of Schottky type was formed on the stoichiometric surface of polycrystalline CdZnTe layers to suppress the leakage current of polycrystalline CdZnTe X-ray detectors. The polycrystalline CdZnTe Schottky barrier diodes with indium contact exhibit the low leakage current (14 nA/cm2) at 40 V due to its high barrier height (φ{symbol}b = 0.80 eV). In X-ray image acquisition with Schottky-type linear array polycrystalline CdZnTe X-ray detector, we have obtained the promising results and proved the possibility of polycrystalline CdZnTe for applications as a flat panel X-ray detector.
AB - The polycrystalline CdZnTe:Cl thick films which have high resistivity about 5 × 109 Ω cm are grown by thermal evaporation method. The leakage currents of as-deposited CdZnTe layers are still too high to operate as medical applications. The blocking layer of Schottky type was formed on the stoichiometric surface of polycrystalline CdZnTe layers to suppress the leakage current of polycrystalline CdZnTe X-ray detectors. The polycrystalline CdZnTe Schottky barrier diodes with indium contact exhibit the low leakage current (14 nA/cm2) at 40 V due to its high barrier height (φ{symbol}b = 0.80 eV). In X-ray image acquisition with Schottky-type linear array polycrystalline CdZnTe X-ray detector, we have obtained the promising results and proved the possibility of polycrystalline CdZnTe for applications as a flat panel X-ray detector.
KW - CdZnTe
KW - Leakage current
KW - Polycrystalline
KW - Schottky diode
KW - X-ray detector
UR - http://www.scopus.com/inward/record.url?scp=55049094830&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=55049094830&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2008.01.020
DO - 10.1016/j.cap.2008.01.020
M3 - Article
AN - SCOPUS:55049094830
VL - 9
SP - 306
EP - 310
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 2
ER -