Schottky-type polycrystalline CdZnTe X-ray detectors

The polycrystalline CdZnTe:Cl thick films which have high resistivity about 5 × 10⁹ Ω cm are grown by thermal evaporation method. The leakage currents of as-deposited CdZnTe layers are still too high to operate as medical applications. The blocking layer of Schottky type was formed on the stoichiometric surface of polycrystalline CdZnTe layers to suppress the leakage current of polycrystalline CdZnTe X-ray detectors. The polycrystalline CdZnTe Schottky barrier diodes with indium contact exhibit the low leakage current (14 nA/cm²) at 40 V due to its high barrier height (φ{symbol}_b = 0.80 eV). In X-ray image acquisition with Schottky-type linear array polycrystalline CdZnTe X-ray detector, we have obtained the promising results and proved the possibility of polycrystalline CdZnTe for applications as a flat panel X-ray detector.