Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant

S. J. Kahng, Y. H. Ha, D. W. Moon, Y. Kuk

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Si surface segregation was studied quantitatively in Ge overlayers grown on Si(100)-(2 X 1) with medium energy ion scattering spectroscopy. The behavior of Si surface peak, as a function of Ge coverage, is explained with known growth structures in the Stranski-Krastanov Ge overlayers. We observed that the intermixing between Ge and Si is not significant in the presence of hydrogen surfactant. Possible microscopic models for the observed results are presented.

Original languageEnglish
Pages (from-to)981-983
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number7
DOIs
Publication statusPublished - 2000 Aug 14

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant'. Together they form a unique fingerprint.

  • Cite this