Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant

Se-Jong Kahng, Y. H. Ha, D. W. Moon, Y. Kuk

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Si surface segregation was studied quantitatively in Ge overlayers grown on Si(100)-(2 X 1) with medium energy ion scattering spectroscopy. The behavior of Si surface peak, as a function of Ge coverage, is explained with known growth structures in the Stranski-Krastanov Ge overlayers. We observed that the intermixing between Ge and Si is not significant in the presence of hydrogen surfactant. Possible microscopic models for the observed results are presented.

Original languageEnglish
Pages (from-to)981-983
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number7
Publication statusPublished - 2000 Aug 14
Externally publishedYes

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surfactants
ion scattering
hydrogen
spectroscopy
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant. / Kahng, Se-Jong; Ha, Y. H.; Moon, D. W.; Kuk, Y.

In: Applied Physics Letters, Vol. 77, No. 7, 14.08.2000, p. 981-983.

Research output: Contribution to journalArticle

Kahng, Se-Jong ; Ha, Y. H. ; Moon, D. W. ; Kuk, Y. / Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant. In: Applied Physics Letters. 2000 ; Vol. 77, No. 7. pp. 981-983.
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