Si surface segregation was studied quantitatively in Ge overlayers grown on Si(100)-(2 X 1) with medium energy ion scattering spectroscopy. The behavior of Si surface peak, as a function of Ge coverage, is explained with known growth structures in the Stranski-Krastanov Ge overlayers. We observed that the intermixing between Ge and Si is not significant in the presence of hydrogen surfactant. Possible microscopic models for the observed results are presented.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2000 Aug 14|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)