Abstract
Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO 2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 7cm -2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.
| Original language | English |
|---|---|
| Article number | 6163345 |
| Pages (from-to) | 579-581 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 33 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2012 Apr 1 |
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Keywords
- Area dependent
- germanium
- monolithic
- optoelectronics
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Selective-area high-quality germanium growth for monolithic integrated optoelectronics. / Yu, Hyun-Yong; Park, Jin Hong; Okyay, Ali K.; Saraswat, Krishna C.
In: IEEE Electron Device Letters, Vol. 33, No. 4, 6163345, 01.04.2012, p. 579-581.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Selective-area high-quality germanium growth for monolithic integrated optoelectronics
AU - Yu, Hyun-Yong
AU - Park, Jin Hong
AU - Okyay, Ali K.
AU - Saraswat, Krishna C.
PY - 2012/4/1
Y1 - 2012/4/1
N2 - Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO 2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 7cm -2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.
AB - Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO 2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 7cm -2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.
KW - Area dependent
KW - germanium
KW - monolithic
KW - optoelectronics
UR - http://www.scopus.com/inward/record.url?scp=84862820305&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84862820305&partnerID=8YFLogxK
U2 - 10.1109/LED.2011.2181814
DO - 10.1109/LED.2011.2181814
M3 - Article
AN - SCOPUS:84862820305
VL - 33
SP - 579
EP - 581
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 4
M1 - 6163345
ER -