Selective-area high-quality germanium growth for monolithic integrated optoelectronics

Hyun-Yong Yu, Jin Hong Park, Ali K. Okyay, Krishna C. Saraswat

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO 2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 7cm -2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.

Original languageEnglish
Article number6163345
Pages (from-to)579-581
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number4
DOIs
Publication statusPublished - 2012 Apr 1

Fingerprint

Germanium
Integrated optoelectronics
Silicon
VLSI circuits
Surface roughness
Metals
Defect density
Photodiodes
Optoelectronic devices
Hydrogen
Microscopes
Annealing
Semiconductor materials
Electrons
Substrates

Keywords

  • Area dependent
  • germanium
  • monolithic
  • optoelectronics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Selective-area high-quality germanium growth for monolithic integrated optoelectronics. / Yu, Hyun-Yong; Park, Jin Hong; Okyay, Ali K.; Saraswat, Krishna C.

In: IEEE Electron Device Letters, Vol. 33, No. 4, 6163345, 01.04.2012, p. 579-581.

Research output: Contribution to journalArticle

Yu, Hyun-Yong ; Park, Jin Hong ; Okyay, Ali K. ; Saraswat, Krishna C. / Selective-area high-quality germanium growth for monolithic integrated optoelectronics. In: IEEE Electron Device Letters. 2012 ; Vol. 33, No. 4. pp. 579-581.
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