Selective-area high-quality germanium growth for monolithic integrated optoelectronics

Hyun Yong Yu; Jin Hong Park; Ali K. Okyay; Krishna C. Saraswat

doi:10.1109/LED.2011.2181814

Selective-area high-quality germanium growth for monolithic integrated optoelectronics

Hyun Yong Yu, Jin Hong Park, Ali K. Okyay, Krishna C. Saraswat

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO ₂ windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 ⁷cm ^-2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.

Original language	English
Article number	6163345
Pages (from-to)	579-581
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	4
DOIs	https://doi.org/10.1109/LED.2011.2181814
Publication status	Published - 2012 Apr

Keywords

Area dependent
germanium
monolithic
optoelectronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Selective-area high-quality germanium growth for monolithic integrated optoelectronics",

abstract = "Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO 2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 7cm -2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.",

keywords = "Area dependent, germanium, monolithic, optoelectronics",

author = "Yu, {Hyun Yong} and Park, {Jin Hong} and Okyay, {Ali K.} and Saraswat, {Krishna C.}",

note = "Funding Information: Manuscript received November 5, 2011; revised December 12, 2011; accepted December 17, 2011. Date of publication March 2, 2012; date of current version March 23, 2012. This work was supported in part by Microelectronics Advanced Research Corporation Interconnect Focus Centers and in part by the Stanford University Initiative for Nanoscale Materials and Process program. This work was performed at the Stanford Nanofabrication Facility. The review of this letter was arranged by Editor P. K.-L. Yu. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

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doi = "10.1109/LED.2011.2181814",

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AU - Saraswat, Krishna C.

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N2 - Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO 2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 7cm -2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.

AB - Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO 2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 7cm -2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.

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Selective-area high-quality germanium growth for monolithic integrated optoelectronics

Abstract

Keywords

ASJC Scopus subject areas

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