Selective-area high-quality germanium growth for monolithic integrated optoelectronics

Hyun Yong Yu, Jin Hong Park, Ali K. Okyay, Krishna C. Saraswat

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO 2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 7cm -2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.

Original languageEnglish
Article number6163345
Pages (from-to)579-581
Number of pages3
JournalIEEE Electron Device Letters
Issue number4
Publication statusPublished - 2012 Apr


  • Area dependent
  • germanium
  • monolithic
  • optoelectronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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