Abstract
The authors report on the direct comparison of the chemical etch characteristics on both Ga- and N-face gallium nitride (GaN) by phosphoric acid. First, Ga-face GaN was grown next to N-face GaN by a polarity inversion method in a metal-organic chemical vapor deposition reactor. Micro-photoluminescence, atomic force microscopy, scanning electron microscopy, and micro-Raman spectroscopy were used to analyze the etch characteristics of Ga- and N-face GaN before and after a H 3PO 4-based chemical etch. Ga-face was chemically stable in a phosphoric acid solution. However, the chemical etch continued proceeding on the N-face GaN due to the weak repulsive force to OH - ions. Dodecagonal nano-pyramids which dramatically enhanced the photoluminescence intensity were observed on N-face GaN after a H 3PO 4-based chemical etch.
Original language | English |
---|---|
Article number | 040602 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 30 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2012 Jul |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films