Selective etching process of SrBi2Ta2O9 and CeO2 for self-aligned ferroelectric gate structure

Sun Il Shim, Young Suk Kwon, Seong Il Kim, Yong Tae Kim, Jung ho Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The etching selectivity between SrBi2Ta2O (SBT) and CeO2 films was investigated. The study was carried out by optimizing gas mixture of Ar and Cl2, the inductively coupled plasma (ICP) power and the rf bias power in the ICP-reactive ion etching (RIE) system. It was found that the ion etching selectivity of SBT/CeO2 was 6.8 and the vertical etching angle of SBT was 82° at the condition of 50% Cl 2 concentration. It was also observed that the etch rates of the HfO based dielectric films appear to depend on etch properties of each phase in the films.

Original languageEnglish
Pages (from-to)1559-1563
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number4
DOIs
Publication statusPublished - 2004 Jul 1

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Ferroelectric materials
Etching
etching
Inductively coupled plasma
Dielectric films
Plasma etching
selectivity
Reactive ion etching
Gas mixtures
Ions
gas mixtures
ions

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Selective etching process of SrBi2Ta2O9 and CeO2 for self-aligned ferroelectric gate structure. / Shim, Sun Il; Kwon, Young Suk; Kim, Seong Il; Kim, Yong Tae; Park, Jung ho.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 22, No. 4, 01.07.2004, p. 1559-1563.

Research output: Contribution to journalArticle

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