Selective etching process of SrBi2Ta2O9 and CeO2 for self-aligned ferroelectric gate structure

Sun Il Shim, Young Suk Kwon, Seong Il Kim, Yong Tae Kim, Jung ho Park

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Abstract

The etching selectivity between SrBi2Ta2O (SBT) and CeO2 films was investigated. The study was carried out by optimizing gas mixture of Ar and Cl2, the inductively coupled plasma (ICP) power and the rf bias power in the ICP-reactive ion etching (RIE) system. It was found that the ion etching selectivity of SBT/CeO2 was 6.8 and the vertical etching angle of SBT was 82° at the condition of 50% Cl 2 concentration. It was also observed that the etch rates of the HfO based dielectric films appear to depend on etch properties of each phase in the films.

Original languageEnglish
Pages (from-to)1559-1563
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number4
DOIs
Publication statusPublished - 2004 Jul 1

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ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

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