Abstract
We report on the selective formation of self-assembled quantum dots (QDs) using the {111}-facet revealed GaAs substrate and masked substrate by nano patterned GazOa thin film. Using the {111}-facet revealed substrate, higher migration effect of the In atoms on the {111}-facet compared to the (100) plane enables the selective formation of InAs QDs. In the case of the masked substrate by Ga 2O 3 thin film, more effective and easy selective formation of self-assembled QDs could be realized. The selectivity of the QDs growth was obtained successfully using the 0.2 μm patterned Ga 2O 3 layer, which resulted from the enhanced migration effect of the adsorbed In atoms on the Ga 2U 3 surface as well as the desorption effect.
| Original language | English |
|---|---|
| Pages (from-to) | S287-S290 |
| Journal | Journal of the Korean Physical Society |
| Volume | 33 |
| Issue number | SUPPL. 2 |
| Publication status | Published - 1998 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Hahn, C. K., Jang, Y. J., Oh, C. S., Park, Y. J., Kim, E. K., Min, S. K., Park, K. H., & Park, J. H. (1998). Selective formation of InAs quantum dot structures grown by molecular beam epitaxy. Journal of the Korean Physical Society, 33(SUPPL. 2), S287-S290.