Selective formation of InAs quantum dot structures grown by molecular beam epitaxy

Cheol Koo Hahn, Young Jun Jang, Chi Sung Oh, Young Ju Park, Eun Kyu Kim, Suk Ki Min, Kyung Hyun Park, Jung Ho Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report on the selective formation of self-assembled quantum dots (QDs) using the {111}-facet revealed GaAs substrate and masked substrate by nano patterned GazOa thin film. Using the {111}-facet revealed substrate, higher migration effect of the In atoms on the {111}-facet compared to the (100) plane enables the selective formation of InAs QDs. In the case of the masked substrate by Ga 2O 3 thin film, more effective and easy selective formation of self-assembled QDs could be realized. The selectivity of the QDs growth was obtained successfully using the 0.2 μm patterned Ga 2O 3 layer, which resulted from the enhanced migration effect of the adsorbed In atoms on the Ga 2U 3 surface as well as the desorption effect.

Original languageEnglish
Pages (from-to)S287-S290
JournalJournal of the Korean Physical Society
Volume33
Issue numberSUPPL. 2
Publication statusPublished - 1998

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Hahn, C. K., Jang, Y. J., Oh, C. S., Park, Y. J., Kim, E. K., Min, S. K., Park, K. H., & Park, J. H. (1998). Selective formation of InAs quantum dot structures grown by molecular beam epitaxy. Journal of the Korean Physical Society, 33(SUPPL. 2), S287-S290.