Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga2O3 thin film as a mask material

Cheol Koo Hahn, Young Ju Park, Eun Kyu Kim, Suk Ki Min, Suk Koo Jung, Jung ho Park

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

We report on the selective formation of InGaAs quantum dots (QDs) by molecular beam epitaxy. Nanoscale patterned Ga2O3 thin film deposited on the GaAs (100) substrate was employed as a mask material. Due to the enhanced migration effect of the group-III adatoms, such as Ga and In on Ga2O3 mask layer, the InGaAs QDs formed on the patterned substrate results in coalesced islands unlike those formed on the nonpatterned substrate. The estimation of the relative volume of the islands per unit area revealed that the desorption process as well as the migration of the Ga and In adatoms might occur on the Ga2O3 layer during the growth process, providing a good selective growth of self-assembled QDs.

Original languageEnglish
Pages (from-to)2479-2481
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number17
DOIs
Publication statusPublished - 1998 Dec 1

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masks
quantum dots
adatoms
thin films
molecular beam epitaxy
desorption

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga2O3 thin film as a mask material. / Hahn, Cheol Koo; Park, Young Ju; Kim, Eun Kyu; Min, Suk Ki; Jung, Suk Koo; Park, Jung ho.

In: Applied Physics Letters, Vol. 73, No. 17, 01.12.1998, p. 2479-2481.

Research output: Contribution to journalArticle

Hahn, Cheol Koo ; Park, Young Ju ; Kim, Eun Kyu ; Min, Suk Ki ; Jung, Suk Koo ; Park, Jung ho. / Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga2O3 thin film as a mask material. In: Applied Physics Letters. 1998 ; Vol. 73, No. 17. pp. 2479-2481.
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