Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates

Y. Huh, J. Y. Lee, J. H. Lee, T. J. Lee, S. C. Lyu, Cheol Jin Lee

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

We have achieved selective growth of high-purity carbon nanotubes (CNTs) on iron-deposited hole-patterns by thermal chemical vapor deposition (CVD) of acetylene gas. The vertically well-aligned CNTs were uniformly synthesized with good selectivity on hole-patterned silicon substrates. The CNTs indicated multiwalled and bamboo-like structure. The turn-on gate voltage at the CNT-based triode structure was about 55 V and emission current density was 2.0 μA at the applied gate voltage of 100 V.

Original languageEnglish
Pages (from-to)388-392
Number of pages5
JournalChemical Physics Letters
Volume375
Issue number3-4
DOIs
Publication statusPublished - 2003 Jul 3
Externally publishedYes

Fingerprint

Carbon Nanotubes
Silicon
Field emission
field emission
carbon nanotubes
silicon
Substrates
Triodes
Acetylene
Bamboo
Multiwalled carbon nanotubes (MWCN)
Electric potential
triodes
Chemical vapor deposition
electric potential
Current density
Iron
Gases
acetylene
purity

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

Cite this

Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates. / Huh, Y.; Lee, J. Y.; Lee, J. H.; Lee, T. J.; Lyu, S. C.; Lee, Cheol Jin.

In: Chemical Physics Letters, Vol. 375, No. 3-4, 03.07.2003, p. 388-392.

Research output: Contribution to journalArticle

Huh, Y. ; Lee, J. Y. ; Lee, J. H. ; Lee, T. J. ; Lyu, S. C. ; Lee, Cheol Jin. / Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates. In: Chemical Physics Letters. 2003 ; Vol. 375, No. 3-4. pp. 388-392.
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