Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates

Y. Huh, J. Y. Lee, J. H. Lee, T. J. Lee, S. C. Lyu, Cheol Jin Lee

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

We have achieved selective growth of high-purity carbon nanotubes (CNTs) on iron-deposited hole-patterns by thermal chemical vapor deposition (CVD) of acetylene gas. The vertically well-aligned CNTs were uniformly synthesized with good selectivity on hole-patterned silicon substrates. The CNTs indicated multiwalled and bamboo-like structure. The turn-on gate voltage at the CNT-based triode structure was about 55 V and emission current density was 2.0 μA at the applied gate voltage of 100 V.

Original languageEnglish
Pages (from-to)388-392
Number of pages5
JournalChemical Physics Letters
Volume375
Issue number3-4
DOIs
Publication statusPublished - 2003 Jul 3
Externally publishedYes

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ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

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