Selective p- and n-Doping of Colloidal PbSe Nanowires to Construct Electronic and Optoelectronic Devices

Soong Ju Oh, Chawit Uswachoke, Tianshuo Zhao, Ji Hyuk Choi, Benjamin T. Diroll, Christopher B. Murray, Cherie R. Kagan

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length. We demonstrate integrated complementary metal-oxide semiconductor inverters in axially doped nanowires that have gains of 15 and a near full signal swing. We also show that these pn junction PbSe nanowire arrays form fast switching photodiodes with photocurrents that can be optimized in a gated-diode structure. Doping of the colloidal nanowires is compatible with device fabrication on flexible plastic substrates, promising a low-cost, solution-based route to high-performance nanowire devices.

Original languageEnglish
Pages (from-to)7536-7544
Number of pages9
JournalACS Nano
Volume9
Issue number7
DOIs
Publication statusPublished - 2015 Jul 28

Fingerprint

optoelectronic devices
Optoelectronic devices
Nanowires
nanowires
Doping (additives)
electronics
inverters
Polymethyl Methacrylate
lead selenide
Photodiodes
Photocurrents
Polymethyl methacrylates
polymethyl methacrylate
photodiodes
photocurrents
CMOS
Diodes
plastics
Lead
Metals

Keywords

  • CMOS inverter
  • colloidal nanowires
  • PbSe
  • photodiode
  • pn junction
  • selective doping

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Oh, S. J., Uswachoke, C., Zhao, T., Choi, J. H., Diroll, B. T., Murray, C. B., & Kagan, C. R. (2015). Selective p- and n-Doping of Colloidal PbSe Nanowires to Construct Electronic and Optoelectronic Devices. ACS Nano, 9(7), 7536-7544. https://doi.org/10.1021/acsnano.5b02734

Selective p- and n-Doping of Colloidal PbSe Nanowires to Construct Electronic and Optoelectronic Devices. / Oh, Soong Ju; Uswachoke, Chawit; Zhao, Tianshuo; Choi, Ji Hyuk; Diroll, Benjamin T.; Murray, Christopher B.; Kagan, Cherie R.

In: ACS Nano, Vol. 9, No. 7, 28.07.2015, p. 7536-7544.

Research output: Contribution to journalArticle

Oh, SJ, Uswachoke, C, Zhao, T, Choi, JH, Diroll, BT, Murray, CB & Kagan, CR 2015, 'Selective p- and n-Doping of Colloidal PbSe Nanowires to Construct Electronic and Optoelectronic Devices', ACS Nano, vol. 9, no. 7, pp. 7536-7544. https://doi.org/10.1021/acsnano.5b02734
Oh, Soong Ju ; Uswachoke, Chawit ; Zhao, Tianshuo ; Choi, Ji Hyuk ; Diroll, Benjamin T. ; Murray, Christopher B. ; Kagan, Cherie R. / Selective p- and n-Doping of Colloidal PbSe Nanowires to Construct Electronic and Optoelectronic Devices. In: ACS Nano. 2015 ; Vol. 9, No. 7. pp. 7536-7544.
@article{3c5a41a4316d4db680637e0d0001f7b8,
title = "Selective p- and n-Doping of Colloidal PbSe Nanowires to Construct Electronic and Optoelectronic Devices",
abstract = "We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length. We demonstrate integrated complementary metal-oxide semiconductor inverters in axially doped nanowires that have gains of 15 and a near full signal swing. We also show that these pn junction PbSe nanowire arrays form fast switching photodiodes with photocurrents that can be optimized in a gated-diode structure. Doping of the colloidal nanowires is compatible with device fabrication on flexible plastic substrates, promising a low-cost, solution-based route to high-performance nanowire devices.",
keywords = "CMOS inverter, colloidal nanowires, PbSe, photodiode, pn junction, selective doping",
author = "Oh, {Soong Ju} and Chawit Uswachoke and Tianshuo Zhao and Choi, {Ji Hyuk} and Diroll, {Benjamin T.} and Murray, {Christopher B.} and Kagan, {Cherie R.}",
year = "2015",
month = "7",
day = "28",
doi = "10.1021/acsnano.5b02734",
language = "English",
volume = "9",
pages = "7536--7544",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "7",

}

TY - JOUR

T1 - Selective p- and n-Doping of Colloidal PbSe Nanowires to Construct Electronic and Optoelectronic Devices

AU - Oh, Soong Ju

AU - Uswachoke, Chawit

AU - Zhao, Tianshuo

AU - Choi, Ji Hyuk

AU - Diroll, Benjamin T.

AU - Murray, Christopher B.

AU - Kagan, Cherie R.

PY - 2015/7/28

Y1 - 2015/7/28

N2 - We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length. We demonstrate integrated complementary metal-oxide semiconductor inverters in axially doped nanowires that have gains of 15 and a near full signal swing. We also show that these pn junction PbSe nanowire arrays form fast switching photodiodes with photocurrents that can be optimized in a gated-diode structure. Doping of the colloidal nanowires is compatible with device fabrication on flexible plastic substrates, promising a low-cost, solution-based route to high-performance nanowire devices.

AB - We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length. We demonstrate integrated complementary metal-oxide semiconductor inverters in axially doped nanowires that have gains of 15 and a near full signal swing. We also show that these pn junction PbSe nanowire arrays form fast switching photodiodes with photocurrents that can be optimized in a gated-diode structure. Doping of the colloidal nanowires is compatible with device fabrication on flexible plastic substrates, promising a low-cost, solution-based route to high-performance nanowire devices.

KW - CMOS inverter

KW - colloidal nanowires

KW - PbSe

KW - photodiode

KW - pn junction

KW - selective doping

UR - http://www.scopus.com/inward/record.url?scp=84938118615&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938118615&partnerID=8YFLogxK

U2 - 10.1021/acsnano.5b02734

DO - 10.1021/acsnano.5b02734

M3 - Article

AN - SCOPUS:84938118615

VL - 9

SP - 7536

EP - 7544

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 7

ER -