Selective p- and n-Doping of Colloidal PbSe Nanowires to Construct Electronic and Optoelectronic Devices

Soong Ju Oh, Chawit Uswachoke, Tianshuo Zhao, Ji Hyuk Choi, Benjamin T. Diroll, Christopher B. Murray, Cherie R. Kagan

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length. We demonstrate integrated complementary metal-oxide semiconductor inverters in axially doped nanowires that have gains of 15 and a near full signal swing. We also show that these pn junction PbSe nanowire arrays form fast switching photodiodes with photocurrents that can be optimized in a gated-diode structure. Doping of the colloidal nanowires is compatible with device fabrication on flexible plastic substrates, promising a low-cost, solution-based route to high-performance nanowire devices.

Original languageEnglish
Pages (from-to)7536-7544
Number of pages9
JournalACS Nano
Volume9
Issue number7
DOIs
Publication statusPublished - 2015 Jul 28

Keywords

  • CMOS inverter
  • colloidal nanowires
  • PbSe
  • photodiode
  • pn junction
  • selective doping

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Oh, S. J., Uswachoke, C., Zhao, T., Choi, J. H., Diroll, B. T., Murray, C. B., & Kagan, C. R. (2015). Selective p- and n-Doping of Colloidal PbSe Nanowires to Construct Electronic and Optoelectronic Devices. ACS Nano, 9(7), 7536-7544. https://doi.org/10.1021/acsnano.5b02734