Abstract
We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length. We demonstrate integrated complementary metal-oxide semiconductor inverters in axially doped nanowires that have gains of 15 and a near full signal swing. We also show that these pn junction PbSe nanowire arrays form fast switching photodiodes with photocurrents that can be optimized in a gated-diode structure. Doping of the colloidal nanowires is compatible with device fabrication on flexible plastic substrates, promising a low-cost, solution-based route to high-performance nanowire devices.
| Original language | English |
|---|---|
| Pages (from-to) | 7536-7544 |
| Number of pages | 9 |
| Journal | ACS Nano |
| Volume | 9 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2015 Jul 28 |
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Keywords
- CMOS inverter
- colloidal nanowires
- PbSe
- photodiode
- pn junction
- selective doping
ASJC Scopus subject areas
- Materials Science(all)
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Selective p- and n-Doping of Colloidal PbSe Nanowires to Construct Electronic and Optoelectronic Devices. / Oh, Soong Ju; Uswachoke, Chawit; Zhao, Tianshuo; Choi, Ji Hyuk; Diroll, Benjamin T.; Murray, Christopher B.; Kagan, Cherie R.
In: ACS Nano, Vol. 9, No. 7, 28.07.2015, p. 7536-7544.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Selective p- and n-Doping of Colloidal PbSe Nanowires to Construct Electronic and Optoelectronic Devices
AU - Oh, Soong Ju
AU - Uswachoke, Chawit
AU - Zhao, Tianshuo
AU - Choi, Ji Hyuk
AU - Diroll, Benjamin T.
AU - Murray, Christopher B.
AU - Kagan, Cherie R.
PY - 2015/7/28
Y1 - 2015/7/28
N2 - We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length. We demonstrate integrated complementary metal-oxide semiconductor inverters in axially doped nanowires that have gains of 15 and a near full signal swing. We also show that these pn junction PbSe nanowire arrays form fast switching photodiodes with photocurrents that can be optimized in a gated-diode structure. Doping of the colloidal nanowires is compatible with device fabrication on flexible plastic substrates, promising a low-cost, solution-based route to high-performance nanowire devices.
AB - We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length. We demonstrate integrated complementary metal-oxide semiconductor inverters in axially doped nanowires that have gains of 15 and a near full signal swing. We also show that these pn junction PbSe nanowire arrays form fast switching photodiodes with photocurrents that can be optimized in a gated-diode structure. Doping of the colloidal nanowires is compatible with device fabrication on flexible plastic substrates, promising a low-cost, solution-based route to high-performance nanowire devices.
KW - CMOS inverter
KW - colloidal nanowires
KW - PbSe
KW - photodiode
KW - pn junction
KW - selective doping
UR - http://www.scopus.com/inward/record.url?scp=84938118615&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84938118615&partnerID=8YFLogxK
U2 - 10.1021/acsnano.5b02734
DO - 10.1021/acsnano.5b02734
M3 - Article
AN - SCOPUS:84938118615
VL - 9
SP - 7536
EP - 7544
JO - ACS Nano
JF - ACS Nano
SN - 1936-0851
IS - 7
ER -