In this paper, we investigated a novel method of selectively assembling single-walled carbon nanotubes (SWCNTs) on a silicon (Si) substrate. These SWCNT arrays were fabricated by using only a photolithographic process. Using this technique, SWCNTs could be absorbed on the Si substrate surface without complicated chemical steps. As a result, we successfully fabricated SWCNT-based multi-channel patterns. The unmanageable SWCNTs could be easily absorbed on the Si0 2 surface. This is to advance one step further from the conventional self-assembled process using octadecyltrichlorosilane (OTS). This technique will provide a useful basis for the implementation of nanostructure-based field emission transistor (FET) devices. This new process can be used to fabricate SWCNT channels of FET devices.