Selectively self-assembled single-walled carbon nanotubes using only photolithography without additional chemical process

K. H. Kim, T. G. Kim, S. Lee, Y. M. Jhon, S. H. Kim, Y. T. Byun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, we investigated a novel method of selectively assembling single-walled carbon nanotubes (SWCNTs) on a silicon (Si) substrate. These SWCNT arrays were fabricated by using only a photolithographic process. Using this technique, SWCNTs could be absorbed on the Si substrate surface without complicated chemical steps. As a result, we successfully fabricated SWCNT-based multi-channel patterns. The unmanageable SWCNTs could be easily absorbed on the Si0 2 surface. This is to advance one step further from the conventional self-assembled process using octadecyltrichlorosilane (OTS). This technique will provide a useful basis for the implementation of nanostructure-based field emission transistor (FET) devices. This new process can be used to fabricate SWCNT channels of FET devices.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages825-826
Number of pages2
DOIs
Publication statusPublished - 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 2010 Jul 252010 Jul 30

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period10/7/2510/7/30

Keywords

  • Photolithography
  • SAM
  • SWCNT

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Kim, K. H., Kim, T. G., Lee, S., Jhon, Y. M., Kim, S. H., & Byun, Y. T. (2011). Selectively self-assembled single-walled carbon nanotubes using only photolithography without additional chemical process. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 825-826). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666631