Self-aligned growth of CdTe photodetectors using a graphene seed layer

Gwangseok Yang, Donghwan Kim, Ji Hyun Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We demonstrate the self-aligned growth of CdTe photodetectors using graphene as a pre-defined seed layer. Defects were generated in the graphene prior to growth to act as CdTe nucleation sites. Self-aligned CdTe structures were grown selectively on the pre-defined graphene region. The electrical and optoelectrical properties of the photodetectors were systematically analyzed. Our CdTe devices displayed Ohmic behavior with a low sheet resistance of 1.24 × 108 Ω/sq. Excellent photodetecting performances were achieved, including a high on-off ratio (∼2.8), fast response time (10.4 s), and highly reproducible photoresponses. The fabrication method proposed here for these self-aligned device structures proves valuable for the development of next-generation graphene-semiconductor hybrid devices.

Original languageEnglish
Pages (from-to)A1081-A1086
JournalOptics Express
Volume23
Issue number19
DOIs
Publication statusPublished - 2015 Aug 11

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photometers
seeds
graphene
electrical properties
nucleation
fabrication
defects

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Self-aligned growth of CdTe photodetectors using a graphene seed layer. / Yang, Gwangseok; Kim, Donghwan; Kim, Ji Hyun.

In: Optics Express, Vol. 23, No. 19, 11.08.2015, p. A1081-A1086.

Research output: Contribution to journalArticle

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