Self-aligned SiGe NPN transistors with 285 GHz f MAX and 207 GHz f T in a manufacturable technology

B. Jagannathan, M. Khater, F. Pagette, J. S. Rieh, D. Angell, H. Chen, J. Florkey, F. Golan, D. R. Greenberg, R. Groves, S. J. Jeng, J. Johnson, E. Mengistu, K. T. Schonenberg, C. M. Schnabel, P. Smith, A. Stricker, D. Ahlgren, G. Freeman, K. SteinS. Subbanna

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