Self-annealing in neutron-irradiated algangan high electron mobility transistors

Hong Yeol Kim, Fan Ren, S. J. Pearton, Ji Hyun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The recovery at room temperature of neutron-irradiated (average neutron energy 9.8 MeV) AlGaNGaN high electron mobility transistors was studied by monitoring the electrical properties for a month. The initial changes in dc characteristics of the devices after neutron irradiation are consistent with the removal of free carriers by creation of deep levels in the bandgap. However, this lattice-displacement damage is unstable at room temperature and a self-annealing effect is observed. At a dose of 5.49× 1011 neutron cm2, the degradation of device drain-source current and transconductance was maximized one week after exposure to the neutron flux and was completely recovered three weeks after the irradiation.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number5
DOIs
Publication statusPublished - 2009 Mar 24

Fingerprint

High electron mobility transistors
high electron mobility transistors
Neutrons
Annealing
neutrons
annealing
Neutron flux
Neutron irradiation
neutron irradiation
Transconductance
room temperature
transconductance
flux (rate)
Electric properties
Energy gap
recovery
electrical properties
Irradiation
degradation
damage

ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

Cite this

Self-annealing in neutron-irradiated algangan high electron mobility transistors. / Kim, Hong Yeol; Ren, Fan; Pearton, S. J.; Kim, Ji Hyun.

In: Electrochemical and Solid-State Letters, Vol. 12, No. 5, 24.03.2009.

Research output: Contribution to journalArticle

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