Self-assembled monolayers made of 6-(5-((6-((5-hexylthiophen-2-yl)ethynyl)- 9,10-bis(phenylethynyl)anthracen-2-yl)ethynyl)thiophen-2-yl)hexyl 3-(triethoxysilyl)propylcarbamate for ultrathin film transistors

Dong Uk Heo, Joo Bin Lee, Yoon Deok Han, Jinsoo Joo, Hosuk Lee, Hosun Lee, Dong Hoon Choi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A new functionalized triethoxysilane bearing an X-shaped, anthracene-based semiconducting molecule on one arm was designed and synthesized as a precursor for the preparation of a self-assembled monolayer (SAM) on a SiO2 substrate. 3-Isocyanatopropyl triethoxysilane was reacted with a monohydroxyl-terminated X-shaped, anthracene-based semiconducting molecule in the presence of tin catalyst. The 6-(5-((6-((5-hexylthiophen-2-yl)ethynyl)-9,10- bis(phenylethynyl)anthracen-2-yl)ethynyl)thiophen-2-yl)hexyl 3-(triethoxysilyl)propylcarbamate (BATHT-TEOS) was found to be stable and sufficiently reactive to form organic monolayers on hydroxylated SiO2 surfaces. The structures and properties of these SAMs were investigated using X-ray photoelectron spectroscopy, UV-vis absorption spectroscopy, photoluminescence (PL) spectroscopy, laser scanning confocal microscopy-PL spectrometry, and spectroscopic ellipsometry. In this work, BATHT-SAM was employed as an interfacial layer on SiO2 to fabricate ultrathin film transistors (UTFTs, active layer thickness ∼ 16.09 nm). The device UTFT-I, made of 0.06 wt % 5,5'-(9,10-bis(phenylethynyl)anthracene-2,6-diyl)bis(ethyne-2, 1-diyl)bis(2-hexylthiophene) (BATHT) solution on an n-octyltrichlorosilane-SAM/ SiO2 layer, showed no gate effect for the carrier transport behavior; however, the device UTFT-II, fabricated on BATHT-SAM/SiO2, exhibited field effect mobilities of 0.04 cm2 V-1 s-1 (Ion/off ∼ 6.3*- 103 to 1.0*- 10 4). This can be attributed to the effect of BATHT-SAM inducing uniform coverage and ordering of BATHT molecules as an upper layer.

Original languageEnglish
Pages (from-to)10948-10955
Number of pages8
JournalLangmuir
Volume28
Issue number29
DOIs
Publication statusPublished - 2012 Jul 24

Fingerprint

Ultrathin films
Self assembled monolayers
Spectrum Analysis
Transistors
transistors
anthracene
Anthracene
Photoelectron Spectroscopy
Acetylene
Equipment and Supplies
Tin
Molecules
photoluminescence
Confocal Microscopy
molecules
Bearings (structural)
laser spectroscopy
Photoluminescence spectroscopy
Ions
Carrier transport

ASJC Scopus subject areas

  • Electrochemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Materials Science(all)
  • Spectroscopy

Cite this

Self-assembled monolayers made of 6-(5-((6-((5-hexylthiophen-2-yl)ethynyl)- 9,10-bis(phenylethynyl)anthracen-2-yl)ethynyl)thiophen-2-yl)hexyl 3-(triethoxysilyl)propylcarbamate for ultrathin film transistors. / Heo, Dong Uk; Lee, Joo Bin; Han, Yoon Deok; Joo, Jinsoo; Lee, Hosuk; Lee, Hosun; Choi, Dong Hoon.

In: Langmuir, Vol. 28, No. 29, 24.07.2012, p. 10948-10955.

Research output: Contribution to journalArticle

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abstract = "A new functionalized triethoxysilane bearing an X-shaped, anthracene-based semiconducting molecule on one arm was designed and synthesized as a precursor for the preparation of a self-assembled monolayer (SAM) on a SiO2 substrate. 3-Isocyanatopropyl triethoxysilane was reacted with a monohydroxyl-terminated X-shaped, anthracene-based semiconducting molecule in the presence of tin catalyst. The 6-(5-((6-((5-hexylthiophen-2-yl)ethynyl)-9,10- bis(phenylethynyl)anthracen-2-yl)ethynyl)thiophen-2-yl)hexyl 3-(triethoxysilyl)propylcarbamate (BATHT-TEOS) was found to be stable and sufficiently reactive to form organic monolayers on hydroxylated SiO2 surfaces. The structures and properties of these SAMs were investigated using X-ray photoelectron spectroscopy, UV-vis absorption spectroscopy, photoluminescence (PL) spectroscopy, laser scanning confocal microscopy-PL spectrometry, and spectroscopic ellipsometry. In this work, BATHT-SAM was employed as an interfacial layer on SiO2 to fabricate ultrathin film transistors (UTFTs, active layer thickness ∼ 16.09 nm). The device UTFT-I, made of 0.06 wt {\%} 5,5'-(9,10-bis(phenylethynyl)anthracene-2,6-diyl)bis(ethyne-2, 1-diyl)bis(2-hexylthiophene) (BATHT) solution on an n-octyltrichlorosilane-SAM/ SiO2 layer, showed no gate effect for the carrier transport behavior; however, the device UTFT-II, fabricated on BATHT-SAM/SiO2, exhibited field effect mobilities of 0.04 cm2 V-1 s-1 (Ion/off ∼ 6.3*- 103 to 1.0*- 10 4). This can be attributed to the effect of BATHT-SAM inducing uniform coverage and ordering of BATHT molecules as an upper layer.",
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AU - Heo, Dong Uk

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