Self-assembled quantum structures deposited by molecular beam epitaxy on GaAs (100) and (311)A substrates

Cheol Koo Hahn, Eun Kyu Kim, In Sang Jeun, Kwang Moo Kim, Moo Sung Kim, Suk Ki Min, Jung Ho Park

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


In0.5Ga0.5 As quantum wires (QWR) and quantum dots (QD) are formed directly on GaAs (311)A and (100) substrates by the molecular beam epitaxy (MBE) technique. The growth mode transition from a 2-dimensional to a 3-dimensional structure is confirmed by the reflection high energy electron diffraction (RHEED) method. Atomic force microscopy (AFM) reveals that the base width of the QWR grown on GaAs(100) substrate is about 20-25 nm, which is about 5 nm smaller than that of the QWR grown on GaAs (311)A under the same growth conditions. Also, QD structures are grown on GaAs(100) substrates. The optical properties of the quantum dot structures are observed with photoluminescence(PL) measurements and the PL peaks of the QD's are detected at 1.251 eV and 1.326 eV.

Original languageEnglish
Pages (from-to)624-627
Number of pages4
JournalJournal of the Korean Physical Society
Issue number5
Publication statusPublished - 1996

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Self-assembled quantum structures deposited by molecular beam epitaxy on GaAs (100) and (311)A substrates'. Together they form a unique fingerprint.

Cite this