Self-catalytic growth of silicon nanowires on stainless steel

Myoung Ha Kim, Yong Hee Park, Ilsoo Kim, Tae Eon Park, Yun Mo Sung, Heon Jin Choi

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7 Citations (Scopus)

Abstract

Silicon nanowires were grown on a stainless steel substrate using a vapor-liquid-solid mechanism in self-catalytic mode. The multi-component Fe-Cr-Ni-Mn-Si catalyst that was formed from the substrate leads the growth of single-crystal Si nanowires with lengths of several micrometers and diameters ranging from 100 to 150 nm. A systematic investigation of the processing parameters revealed that the hydrogen flow rate is critical to the growth of the nanowires. At a high flow rate that exceeds 1000 sccm, the substrate is embrittled by H2, and liquid droplets, which lead the growth of nanowires by the vapor-liquid-solid mechanism, are formed on the substrate. Electrical transport measurements indicated that the nanowires grown with the multi-component catalyst have electrical properties comparable to those grown by a single-component Ti catalyst.

Original languageEnglish
Pages (from-to)2306-2309
Number of pages4
JournalMaterials Letters
Volume64
Issue number21
DOIs
Publication statusPublished - 2010 Nov 15

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Keywords

  • Crystal growth
  • Nanomaterials
  • Semiconductors

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Kim, M. H., Park, Y. H., Kim, I., Park, T. E., Sung, Y. M., & Choi, H. J. (2010). Self-catalytic growth of silicon nanowires on stainless steel. Materials Letters, 64(21), 2306-2309. https://doi.org/10.1016/j.matlet.2010.06.024