Self-catalytic growth of silicon nanowires on stainless steel

Myoung Ha Kim; Yong Hee Park; Ilsoo Kim; Tae Eon Park; Yun Mo Sung; Heon Jin Choi

doi:10.1016/j.matlet.2010.06.024

Self-catalytic growth of silicon nanowires on stainless steel

Myoung Ha Kim, Yong Hee Park, Ilsoo Kim, Tae Eon Park, Yun Mo Sung, Heon Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Silicon nanowires were grown on a stainless steel substrate using a vapor-liquid-solid mechanism in self-catalytic mode. The multi-component Fe-Cr-Ni-Mn-Si catalyst that was formed from the substrate leads the growth of single-crystal Si nanowires with lengths of several micrometers and diameters ranging from 100 to 150 nm. A systematic investigation of the processing parameters revealed that the hydrogen flow rate is critical to the growth of the nanowires. At a high flow rate that exceeds 1000 sccm, the substrate is embrittled by H₂, and liquid droplets, which lead the growth of nanowires by the vapor-liquid-solid mechanism, are formed on the substrate. Electrical transport measurements indicated that the nanowires grown with the multi-component catalyst have electrical properties comparable to those grown by a single-component Ti catalyst.

Original language	English
Pages (from-to)	2306-2309
Number of pages	4
Journal	Materials Letters
Volume	64
Issue number	21
DOIs	https://doi.org/10.1016/j.matlet.2010.06.024
Publication status	Published - 2010 Nov 15

Keywords

Crystal growth
Nanomaterials
Semiconductors

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.matlet.2010.06.024

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title = "Self-catalytic growth of silicon nanowires on stainless steel",

abstract = "Silicon nanowires were grown on a stainless steel substrate using a vapor-liquid-solid mechanism in self-catalytic mode. The multi-component Fe-Cr-Ni-Mn-Si catalyst that was formed from the substrate leads the growth of single-crystal Si nanowires with lengths of several micrometers and diameters ranging from 100 to 150 nm. A systematic investigation of the processing parameters revealed that the hydrogen flow rate is critical to the growth of the nanowires. At a high flow rate that exceeds 1000 sccm, the substrate is embrittled by H2, and liquid droplets, which lead the growth of nanowires by the vapor-liquid-solid mechanism, are formed on the substrate. Electrical transport measurements indicated that the nanowires grown with the multi-component catalyst have electrical properties comparable to those grown by a single-component Ti catalyst.",

keywords = "Crystal growth, Nanomaterials, Semiconductors",

author = "Kim, {Myoung Ha} and Park, {Yong Hee} and Ilsoo Kim and Park, {Tae Eon} and Sung, {Yun Mo} and Choi, {Heon Jin}",

note = "Funding Information: This research was supported by a grant from the National Research Laboratory program ( R0A-2007-000-20075-0 ) and Pioneer Research Program for Converging Technology ( 2009-008-1529 ) through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science & Technology, and Seoul Research and Business Development Program (10816). Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2010",

month = nov,

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doi = "10.1016/j.matlet.2010.06.024",

language = "English",

volume = "64",

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AU - Kim, Myoung Ha

AU - Park, Yong Hee

AU - Kim, Ilsoo

AU - Park, Tae Eon

AU - Sung, Yun Mo

AU - Choi, Heon Jin

N1 - Funding Information: This research was supported by a grant from the National Research Laboratory program ( R0A-2007-000-20075-0 ) and Pioneer Research Program for Converging Technology ( 2009-008-1529 ) through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science & Technology, and Seoul Research and Business Development Program (10816). Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2010/11/15

Y1 - 2010/11/15

N2 - Silicon nanowires were grown on a stainless steel substrate using a vapor-liquid-solid mechanism in self-catalytic mode. The multi-component Fe-Cr-Ni-Mn-Si catalyst that was formed from the substrate leads the growth of single-crystal Si nanowires with lengths of several micrometers and diameters ranging from 100 to 150 nm. A systematic investigation of the processing parameters revealed that the hydrogen flow rate is critical to the growth of the nanowires. At a high flow rate that exceeds 1000 sccm, the substrate is embrittled by H2, and liquid droplets, which lead the growth of nanowires by the vapor-liquid-solid mechanism, are formed on the substrate. Electrical transport measurements indicated that the nanowires grown with the multi-component catalyst have electrical properties comparable to those grown by a single-component Ti catalyst.

AB - Silicon nanowires were grown on a stainless steel substrate using a vapor-liquid-solid mechanism in self-catalytic mode. The multi-component Fe-Cr-Ni-Mn-Si catalyst that was formed from the substrate leads the growth of single-crystal Si nanowires with lengths of several micrometers and diameters ranging from 100 to 150 nm. A systematic investigation of the processing parameters revealed that the hydrogen flow rate is critical to the growth of the nanowires. At a high flow rate that exceeds 1000 sccm, the substrate is embrittled by H2, and liquid droplets, which lead the growth of nanowires by the vapor-liquid-solid mechanism, are formed on the substrate. Electrical transport measurements indicated that the nanowires grown with the multi-component catalyst have electrical properties comparable to those grown by a single-component Ti catalyst.

KW - Crystal growth

KW - Nanomaterials

KW - Semiconductors

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JO - Materials Letters

JF - Materials Letters

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ER -

Self-catalytic growth of silicon nanowires on stainless steel

Abstract

Keywords

ASJC Scopus subject areas

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