Self-ordering in CdSe/ZnSe, CdSe/(Zn,Mn)Se, InSb/GaSb, and InSb/InAs quantum dot structures and a novel type of quantum dot

Peter Möck, Teya Topuria, Nigel D. Browning, Graham R. Booker, Nigel J. Mason, Robin J. Nicholas, Lubov V. Titova, Malgorzata Dobrowolska, Sanghoon Lee, Jacek K. Furdyna

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

CdSe quantum dots (QDs) in a ZnSe matrix, quasi-2D CdSe platelets in a (Zn,Mn)Se matrix, and InSb QDs in InAs and GaSb matrices are characterized by transmission electron microscopy (TEM) in the scanning electron-probe and the parallel-illumination modes. A phenomenological scheme of self-ordering of QDs from the literature is used as a tool for the classification of laterally self-ordered arrangements of these QDs and their predecessor islands. Modified growth conditions led in all studied cases to self-ordered QD and island arrangements of higher levels. CdSe and InSb rich agglomerates of varying sizes (approximately 5 nm to a few 100 nm) with different types of internal compositional modulation have been formed by self-ordering on an atomic scale, potentially forming a new type of QDs and suggesting that the self-ordering process may be of a dissipative nature.

Original languageEnglish
Pages (from-to)J6.3.1-J6.3.6
JournalMaterials Research Society Symposium - Proceedings
Volume642
Publication statusPublished - 2001
EventSemiconductor Quantum Dots II - Boston, MA, United States
Duration: 2000 Nov 272000 Nov 30

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Möck, P., Topuria, T., Browning, N. D., Booker, G. R., Mason, N. J., Nicholas, R. J., Titova, L. V., Dobrowolska, M., Lee, S., & Furdyna, J. K. (2001). Self-ordering in CdSe/ZnSe, CdSe/(Zn,Mn)Se, InSb/GaSb, and InSb/InAs quantum dot structures and a novel type of quantum dot. Materials Research Society Symposium - Proceedings, 642, J6.3.1-J6.3.6.