Self-ordering in CdSe/ZnSe, CdSe/(Zn,Mn)Se, InSb/GaSb, and InSb/InAs quantum dot structures and a novel type of quantum dot

Peter Möck; Teya Topuria; Nigel D. Browning; Graham R. Booker; Nigel J. Mason; Robin J. Nicholas; Lubov V. Titova; Malgorzata Dobrowolska; Sanghoon Lee; Jacek K. Furdyna

Self-ordering in CdSe/ZnSe, CdSe/(Zn,Mn)Se, InSb/GaSb, and InSb/InAs quantum dot structures and a novel type of quantum dot

Peter Möck, Teya Topuria, Nigel D. Browning, Graham R. Booker, Nigel J. Mason, Robin J. Nicholas, Lubov V. Titova, Malgorzata Dobrowolska, Sanghoon Lee, Jacek K. Furdyna

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

CdSe quantum dots (QDs) in a ZnSe matrix, quasi-2D CdSe platelets in a (Zn,Mn)Se matrix, and InSb QDs in InAs and GaSb matrices are characterized by transmission electron microscopy (TEM) in the scanning electron-probe and the parallel-illumination modes. A phenomenological scheme of self-ordering of QDs from the literature is used as a tool for the classification of laterally self-ordered arrangements of these QDs and their predecessor islands. Modified growth conditions led in all studied cases to self-ordered QD and island arrangements of higher levels. CdSe and InSb rich agglomerates of varying sizes (approximately 5 nm to a few 100 nm) with different types of internal compositional modulation have been formed by self-ordering on an atomic scale, potentially forming a new type of QDs and suggesting that the self-ordering process may be of a dissipative nature.

Original language	English
Pages (from-to)	J6.3.1-J6.3.6
Journal	Materials Research Society Symposium - Proceedings
Volume	642
Publication status	Published - 2001
Externally published	Yes
Event	Semiconductor Quantum Dots II - Boston, MA, United States Duration: 2000 Nov 27 → 2000 Nov 30

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{2caeb4d81eea479b8ed43ea161c6f699,

title = "Self-ordering in CdSe/ZnSe, CdSe/(Zn,Mn)Se, InSb/GaSb, and InSb/InAs quantum dot structures and a novel type of quantum dot",

abstract = "CdSe quantum dots (QDs) in a ZnSe matrix, quasi-2D CdSe platelets in a (Zn,Mn)Se matrix, and InSb QDs in InAs and GaSb matrices are characterized by transmission electron microscopy (TEM) in the scanning electron-probe and the parallel-illumination modes. A phenomenological scheme of self-ordering of QDs from the literature is used as a tool for the classification of laterally self-ordered arrangements of these QDs and their predecessor islands. Modified growth conditions led in all studied cases to self-ordered QD and island arrangements of higher levels. CdSe and InSb rich agglomerates of varying sizes (approximately 5 nm to a few 100 nm) with different types of internal compositional modulation have been formed by self-ordering on an atomic scale, potentially forming a new type of QDs and suggesting that the self-ordering process may be of a dissipative nature.",

author = "Peter M{\"o}ck and Teya Topuria and Browning, {Nigel D.} and Booker, {Graham R.} and Mason, {Nigel J.} and Nicholas, {Robin J.} and Titova, {Lubov V.} and Malgorzata Dobrowolska and Sanghoon Lee and Furdyna, {Jacek K.}",

year = "2001",

language = "English",

volume = "642",

pages = "J6.3.1--J6.3.6",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Semiconductor Quantum Dots II ; Conference date: 27-11-2000 Through 30-11-2000",

}

TY - JOUR

T1 - Self-ordering in CdSe/ZnSe, CdSe/(Zn,Mn)Se, InSb/GaSb, and InSb/InAs quantum dot structures and a novel type of quantum dot

AU - Möck, Peter

AU - Topuria, Teya

AU - Browning, Nigel D.

AU - Booker, Graham R.

AU - Mason, Nigel J.

AU - Nicholas, Robin J.

AU - Titova, Lubov V.

AU - Dobrowolska, Malgorzata

AU - Lee, Sanghoon

AU - Furdyna, Jacek K.

PY - 2001

Y1 - 2001

N2 - CdSe quantum dots (QDs) in a ZnSe matrix, quasi-2D CdSe platelets in a (Zn,Mn)Se matrix, and InSb QDs in InAs and GaSb matrices are characterized by transmission electron microscopy (TEM) in the scanning electron-probe and the parallel-illumination modes. A phenomenological scheme of self-ordering of QDs from the literature is used as a tool for the classification of laterally self-ordered arrangements of these QDs and their predecessor islands. Modified growth conditions led in all studied cases to self-ordered QD and island arrangements of higher levels. CdSe and InSb rich agglomerates of varying sizes (approximately 5 nm to a few 100 nm) with different types of internal compositional modulation have been formed by self-ordering on an atomic scale, potentially forming a new type of QDs and suggesting that the self-ordering process may be of a dissipative nature.

AB - CdSe quantum dots (QDs) in a ZnSe matrix, quasi-2D CdSe platelets in a (Zn,Mn)Se matrix, and InSb QDs in InAs and GaSb matrices are characterized by transmission electron microscopy (TEM) in the scanning electron-probe and the parallel-illumination modes. A phenomenological scheme of self-ordering of QDs from the literature is used as a tool for the classification of laterally self-ordered arrangements of these QDs and their predecessor islands. Modified growth conditions led in all studied cases to self-ordered QD and island arrangements of higher levels. CdSe and InSb rich agglomerates of varying sizes (approximately 5 nm to a few 100 nm) with different types of internal compositional modulation have been formed by self-ordering on an atomic scale, potentially forming a new type of QDs and suggesting that the self-ordering process may be of a dissipative nature.

UR - http://www.scopus.com/inward/record.url?scp=0035559938&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035559938

VL - 642

SP - J6.3.1-J6.3.6

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

SN - 0272-9172

T2 - Semiconductor Quantum Dots II

Y2 - 27 November 2000 through 30 November 2000

ER -

Self-ordering in CdSe/ZnSe, CdSe/(Zn,Mn)Se, InSb/GaSb, and InSb/InAs quantum dot structures and a novel type of quantum dot

Abstract

ASJC Scopus subject areas

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