Abstract
CdSe quantum dots (QDs) in a ZnSe matrix, quasi-2D CdSe platelets in a (Zn,Mn)Se matrix, and InSb QDs in InAs and GaSb matrices are characterized by transmission electron microscopy (TEM) in the scanning electron-probe and the parallel-illumination modes. A phenomenological scheme of self-ordering of QDs from the literature is used as a tool for the classification of laterally self-ordered arrangements of these QDs and their predecessor islands. Modified growth conditions led in all studied cases to self-ordered QD and island arrangements of higher levels. CdSe and InSb rich agglomerates of varying sizes (approximately 5 nm to a few 100 nm) with different types of internal compositional modulation have been formed by self-ordering on an atomic scale, potentially forming a new type of QDs and suggesting that the self-ordering process may be of a dissipative nature.
Original language | English |
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Pages (from-to) | J6.3.1-J6.3.6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 642 |
Publication status | Published - 2001 |
Externally published | Yes |
Event | Semiconductor Quantum Dots II - Boston, MA, United States Duration: 2000 Nov 27 → 2000 Nov 30 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering