Self-organized growth, ripening, and optical properties of wide-bandgap II-VI quantum dots

J. L. Merz, Sang Hoon Lee, J. K. Furdyna

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

We discuss the formation of self-assembling II-VI quantum dots during MBE growth, with emphasis on CdSe dots grown on ZnSe. AFM measurements on specimens with uncapped dots show relatively narrow dot size distributions, with typical dot diameters of 35 ∓ 5 nm. Uncapped CdSe dots are unstable with time, showing clear evidence of ripening. Photoluminescence from capped dots indicates strong exciton localization, as evidenced by very intense PL emission even at relatively high temperatures.

Original languageEnglish
Pages (from-to)228-236
Number of pages9
JournalJournal of Crystal Growth
Volume184-185
Publication statusPublished - 1998 Dec 1
Externally publishedYes

Fingerprint

assembling
Molecular beam epitaxy
Excitons
Semiconductor quantum dots
Photoluminescence
Energy gap
Optical properties
quantum dots
excitons
atomic force microscopy
photoluminescence
optical properties
Temperature
LDS 751

Keywords

  • AFM
  • II-VI semiconductors
  • Photoluminescence
  • Quantum dots
  • Ripening
  • Self-assembling

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Self-organized growth, ripening, and optical properties of wide-bandgap II-VI quantum dots. / Merz, J. L.; Lee, Sang Hoon; Furdyna, J. K.

In: Journal of Crystal Growth, Vol. 184-185, 01.12.1998, p. 228-236.

Research output: Contribution to journalArticle

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