Self-organized InAs quantum dots grown in a V-groove InGaAs quantum wire

Chang Sik Son, Mustuo Ogura, Yun Mo Sung, Si Jong Leem, Tae Geun Kim

Research output: Contribution to journalArticle

Abstract

Self-organized InAs quantum dots (QDs), by the Stranski-Krastanow mode, have been grown by using low-pressure metalorganic chemical vapor deposition on V-groove GaAs substrates. By adjusting the flow rate of AsH 3 during the growth of InAs QDs, a one dimensional InAs QD array was successfully formed along the [01̄1] direction only at the bottom of V-grooves. No QDs were observed on the sidewalls and the surface of the mesa top. The InAs QDs took on an oval shape. They were spatially well-isolated along the [Oil] direction with a line density of 3 × 10 3 cm -1. These low-density InAs QDs are expected to be used in areas of quantum information and quantum computing.

Original languageEnglish
Pages (from-to)3121-3125
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume204
Issue number9
DOIs
Publication statusPublished - 2007 Sep

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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