Self-rectifying resistive-switching characteristics with ultralow operating currents in SiO<inf>x</inf>N<inf>y</inf>/AlN bilayer devices

Jeong Yong Kwon, Ju Hyun Park, Tae Geun Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We propose a SiO<inf>x</inf>N<inf>y</inf>/AlN bilayer resistive switching random access memory scheme to eliminate crosstalk in a crossbar array structure. We demonstrated forming-free self-rectifying behaviors at an ultralow operating current (below 200nA) by optimizing the current compliance and operating voltage. The set and reset voltages were reduced using a thin AlN layer, and the voltages' on/off ratio and rectifying ratio were as high as 80 and 10<sup>2</sup>, respectively. In addition, the device showed an endurance of 10<sup>3</sup> dc cycles and a retention time over 10<sup>5</sup>s.

Original languageEnglish
Article number223506
JournalApplied Physics Letters
Volume106
Issue number22
DOIs
Publication statusPublished - 2015 Jun 1

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electric potential
endurance
random access memory
crosstalk
cycles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Self-rectifying resistive-switching characteristics with ultralow operating currents in SiO<inf>x</inf>N<inf>y</inf>/AlN bilayer devices. / Kwon, Jeong Yong; Park, Ju Hyun; Kim, Tae Geun.

In: Applied Physics Letters, Vol. 106, No. 22, 223506, 01.06.2015.

Research output: Contribution to journalArticle

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