We propose a SiO<inf>x</inf>N<inf>y</inf>/AlN bilayer resistive switching random access memory scheme to eliminate crosstalk in a crossbar array structure. We demonstrated forming-free self-rectifying behaviors at an ultralow operating current (below 200nA) by optimizing the current compliance and operating voltage. The set and reset voltages were reduced using a thin AlN layer, and the voltages' on/off ratio and rectifying ratio were as high as 80 and 10<sup>2</sup>, respectively. In addition, the device showed an endurance of 10<sup>3</sup> dc cycles and a retention time over 10<sup>5</sup>s.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)