We propose a SiOxNy/AlN bilayer resistive switching random access memory scheme to eliminate crosstalk in a crossbar array structure. We demonstrated forming-free self-rectifying behaviors at an ultralow operating current (below 200nA) by optimizing the current compliance and operating voltage. The set and reset voltages were reduced using a thin AlN layer, and the voltages' on/off ratio and rectifying ratio were as high as 80 and 102, respectively. In addition, the device showed an endurance of 103 dc cycles and a retention time over 105s.
|Journal||Applied Physics Letters|
|Publication status||Published - 2015 Jun 1|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)