Self-rectifying resistive-switching characteristics with ultralow operating currents in SiO_xN_y/AlN bilayer devices

We propose a SiO_xN_y/AlN bilayer resistive switching random access memory scheme to eliminate crosstalk in a crossbar array structure. We demonstrated forming-free self-rectifying behaviors at an ultralow operating current (below 200nA) by optimizing the current compliance and operating voltage. The set and reset voltages were reduced using a thin AlN layer, and the voltages' on/off ratio and rectifying ratio were as high as 80 and 10², respectively. In addition, the device showed an endurance of 10³ dc cycles and a retention time over 10⁵s.