Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications

Hee Dong Kim, Min Ju Yun, Tae Geun Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity.

Original languageEnglish
Article number213510
JournalApplied Physics Letters
Volume105
Issue number21
DOIs
Publication statusPublished - 2014 Nov 24

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this