Semi-insulating GaN substrates for high-frequency device fabrication

J. A. Freitas, M. Gowda, J. G. Tischler, Ji Hyun Kim, L. Liu, D. Hanser

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Thick c-plane unintentional doped and iron-doped GaN substrates were grown by hydride vapor phase epitaxial technique on sapphire substrates. The morphology and crystalline quality of the freestanding samples show no evident degradation due to iron doping. Low-temperature photoluminescence measurements show reduction of the exciton-bound to neutral impurities band intensities with iron doping increase. Near-infrared photoluminescence studies confirm the incorporation and activation of iron impurities. Variable temperature resistivity measurements verified that the iron-doped films are semi-insulating.

Original languageEnglish
Pages (from-to)3968-3972
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number17
DOIs
Publication statusPublished - 2008 Aug 15

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Iron
iron
Fabrication
fabrication
Substrates
Photoluminescence
Doping (additives)
Impurities
photoluminescence
impurities
Aluminum Oxide
Sapphire
Hydrides
Excitons
hydrides
sapphire
Chemical activation
Vapors
excitons
activation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Semi-insulating GaN substrates for high-frequency device fabrication. / Freitas, J. A.; Gowda, M.; Tischler, J. G.; Kim, Ji Hyun; Liu, L.; Hanser, D.

In: Journal of Crystal Growth, Vol. 310, No. 17, 15.08.2008, p. 3968-3972.

Research output: Contribution to journalArticle

Freitas, JA, Gowda, M, Tischler, JG, Kim, JH, Liu, L & Hanser, D 2008, 'Semi-insulating GaN substrates for high-frequency device fabrication', Journal of Crystal Growth, vol. 310, no. 17, pp. 3968-3972. https://doi.org/10.1016/j.jcrysgro.2008.06.038
Freitas, J. A. ; Gowda, M. ; Tischler, J. G. ; Kim, Ji Hyun ; Liu, L. ; Hanser, D. / Semi-insulating GaN substrates for high-frequency device fabrication. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 17. pp. 3968-3972.
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