Semiconducting π-extended porphyrin dimer and its characteristics in OFET and OPVC

Woo Jea Park, Seung Hyun Chae, Jicheol Shin, Dong Hoon Choi, Suk Joong Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Porphyrin is considered as one of the best candidates for various organic electronic devices, due to its molecular planarity and π-conjugation. Particularly, for the good performing OFETs based on porphyrin derivatives, they should have high crystallinity and close π-π stacking distance in solid state. However, π-extended dimeric porphyrin has never been introduced as a charge transport layer in OFETs. In this regard, we report here on the design and synthesis of new solution processable semiconducting π-extended porphyrin dimer (PD-1), and its OFET and OPVC characteristics. Due to strong π-π interactions, PD-1 showed high crystallinity in film state which displayed an excellent electrical characteristics with high hole mobility of 0.026 cm2/Vs and high current on-off ratio of >105, when the device was fabricated in the mixed solvents of toluene and THF. This mobility is 1000 times better than that of a device fabricated from a solution either THF or toluene exclusively. Furthermore, the photovoltaic performance of PD-1 device shows a PCE of 0.58%. The effective π-conjugation and molecular planarity of π-extended dimeric porphyrin (PD-1) can lead to significant changes in the electrical characteristics of the devices.

Original languageEnglish
Pages (from-to)206-211
Number of pages6
JournalSynthetic Metals
Volume205
DOIs
Publication statusPublished - 2015 Jul 1

Keywords

  • Field-effect transistors
  • Porphyrins
  • Semiconductors
  • Thin films
  • π-π interactions

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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